GTVA262711FA Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 2690 MHz Description The GTVA262711FA is a 300-watt (P ) GaN on SiC high electron 3dB mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and GTVA262711FA a ther mally-enhanced package with ear less flange. Package H-87265J-2 Features Single-carrier WCDMA Drive-up GaN on SiC HEMT technology V = 48 V, I = 320 mA, = 2690 MHz DD DQ 3GPP WCDMA signal, 10 dB PAR Input matched 3.84 MHz bandwidth Typical pulsed CW perfor mance: 10 s pulse width, 24 60 10% duty cycle, 2690 MHz, 48 V Gain - Output power at P = 300 W 3dB - Efficiency = 62% 20 40 - Gain = 19.1 dB 16 20 Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001) 12 0 Efficiency Capable of handling 10:1 VSWR 48 V, 70 W (CW) output power 8 -20 Pb-free and RoHS-compliant PAR 0.01% CCDF 4 -40 0 g262711fa-gr1a -60 25 30 35 40 45 50 55 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) V = 48 V, I = 320 mA, P = 70 W avg, = 2690 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth, DD DQ OUT peak/average = 10 dB 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G 16 18 dB ps Drain Efficiency h 38 38.5 % D Adjacent Channel Power Ratio ACPR 27.5 25 dBc Output PAR 0.01% CCDF OPAR 5.7 6.3 dB All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 04.2, 2019-01-07 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Peak/Average Ratio, Gain (dB) Efficiency (%) GTVA262711FA 2 DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V = 8 V, I = 32 mA V 150 V GS D (BR)DSS Drain-source Leakage Current V = 8 V, V = 10 V I 4.5 mA GS DS DSS Gate Threshold Voltage V = 10 V, I = 32 mA V 3.8 3.0 2.3 V DS D GS(th) Recommended Operating Conditions Parameter Conditions Symbol Min Typ Max Unit Operating Voltage V 0 50 V DD Gate Quiescent Voltage V = 50 V, I = 320 mA V 3.0 V DS D GS(Q) Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage V 125 V DSS Gate-source Voltage V 10 to +2 V GS Gate Current I 32 mA G Drain Current I 12 A D Junction Temperature T 225 C J Storage Temperature Range T 65 to +150 C STG O p e ra t i o n a b ove t h e m a x i mu m va l u e s l i s t e d h e r e m ay c a u s e p e r m a n e n t d a m a g e. M a x i mu m ra t i n g s a r e a b s o l u t e ra t i n g s exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended per iods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (V ) specified above. DD Thermal Characteristics Characteristic Symbol Value Unit Ther mal Resistance R 1.0 C/W qJC (T = 70 C, 70 W (CW), V = 48 V, I = 320 mA, CASE DD DQ 2690 MHz) Ordering Information Type and Version Order Code Package Shipping GTVA262711FA V2 R0 GTVA262711FA-V2-R0 H-87265J-2 Tape & Reel, 50 pcs GTVA262711FA V2 R2 GTVA262711FA-V2-R2 H-87265J-2 Tape & Reel, 250 pcs 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 04.2, 2019-01-07