CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description Package Types: 440117, 440133 Crees CGHV14500 is a gallium nitride (GaN) high electron mobility PNs: CGHV14500F, CGHV14500P transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. Typical Performance Over 1.2 - 1.4 GHz (TC = 25C) of Demonstration Amplifier Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 545 540 530 530 530 W Gain 16.4 16.3 16.2 16.2 16.2 dB Drain Efficiency 69 69 68 66 65 % Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 s pulse width, 10% duty cycle, PIN = 41 dBm. Features Reference design amplifier 1.2 - 1.4 GHz Operation 68% Typical Drain Efficiency FET tuning range UHF through 1800 MHz <0.3 dB Pulsed Amplitude Droop 500 W Typical Output Power Internally pre-matched on input, 16 dB Power Gain unmatched output Large Signal Models Available for ADS and MWO Rev 4.2 March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCGHV14500F 2 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 150 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 84 mA 25C GMAX 1 Maximum Drain Current I 36 A 25C DMAX 2 Soldering Temperature T 245 C S Screw Torque 40 in-oz 3 Pulsed Thermal Resistance, Junction to Case R 0.28 C/W P = 334 W, 500 sec, 10%, 85C JC DISS 4 Pulsed Thermal Resistance, Junction to Case R 0.31 C/W P = 334 W, 500 sec, 10%, 85C JC DISS 5 Case Operating Temperature T -40, +130 C P = 334 W, 500 sec, 10% C DISS 3 Notes: Measured for the CGHV14500P 1 4 Current limit for long term, reliable operation Measured for the CGHV14500F 2 5 Refer to the Application Note on soldering at See also, the Power Dissipation De-rating Curve on Page 5 www.wolfspeed.com/rf/document-library Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 83.6 mA GS(th) DC DS D Gate Quiescent Voltage V -2.7 V V = 50 V, I = 500 mA GS(Q) DC DS D 2 Saturated Drain Current I 54.3 77.7 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 83.6 mA BR DC GS D 3 RF Characteristics (T = 25C, F = 1.4 GHz unless otherwise noted) C 0 Output Power P 400 500 W V = 50 V, I = 500 mA, P = 41 dBm OUT DD DQ IN Drain Efficiency D 60 68 % V = 50 V, I = 500 mA, P = 41 dBm E DD DQ IN Power Gain G 15.25 16.2 dB V = 50 V, I = 500 mA, P = 41 dBm P DD DQ IN Pulsed Amplitude Droop D -0.3 dB V = 50 V, I = 500 mA DD DQ No damage at all phase angles, V = 50 DD Output Mismatch Stress VSWR 5 : 1 Y V, I = 500 mA, P = 41 dBm Pulsed DQ IN Dynamic Characteristics Input Capacitance C 295 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C 27 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 2.7 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV14500-AMP. Pulsed Width = 500 S, Duty Cycle = 10%. Rev 4.2 March 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com