Package Type: 3x4 DFN
PN: CGHV1F025S
CGHV1F025S
25 W, DC - 15 GHz, 40V, GaN HEMT
Crees CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates
on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead
(DFN) package. Under reduced power, the transistor can operate below 40V to as low as
20V V maintaining high gain and efficiency.
DD,
Typical Performance 8.9 - 9.6 GHz (T = 25C) , 40 V
C
Parameter 8.9 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units
Output Power @ P = 37 dBm 24 29 27 25 W
IN
Drain Efficiency @ P = 37 dBm 43.5 48.5 48 46 %
IN
Gain @ P = 0 dBm 10.7 11.6 11.3 11.1 dB
IN
Note:
Measured in the CGHV1F025S-AMP1 application circuit. Pulsed 100 s 10% duty.
Features
Up to 15 GHz Operation
25 W Typical Output Power
11 dB Gain at 9.4 GHz
Application circuit for 8.9 - 9.6 GHz
Subject to change without notice.
1
www.cree.com/rf
Rev 1.3 January 2017Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Symbol Rating Units Notes
Drain-Source Voltage V 100 Volts 25C
DSS
Gate-to-Source Voltage V -10, +2 Volts 25C
GS
Storage Temperature T -65, +150 C
STG
Operating Junction Temperature T 225 C
J
Maximum Forward Gate Current I 4.8 mA 25C
GMAX
1
Maximum Drain Current I 2 A 25C
DMAX
2
Soldering Temperature T 245 C
S
3,4
Case Operating Temperature T -40, +150 C
C
5
Thermal Resistance, Junction to Case R 3.4 C/W 85C
JC
Note:
1
Current limit for long term, reliable operation
2
Refer to the Application Note on soldering at www.cree.com/rf/document-library
3
Simulated at P = 2.4 W
DISS
4
T = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
C
resistance.
5
Pulsed (100 s, 10% Duty). Rth for Crees reference design using a 10 mil Rogers 5880 PCB with 31 (13 mil) Vias would be 3.6 C/W.
For CW operation, the Rth numbers increase to 5C/W for just the device, and 7.3 C/W including the board.
Electrical Characteristics (T = 25C) - 40 V Typical
C
Characteristics Symbol Min. Typ. Max. Units Conditions
1
DC Characteristics
Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 4.8 mA
GS(th) DC DS D
Gate Quiescent Voltage V -2.7 V V = 40 V, I = 240 mA
GS(Q) DC DS D
2
Saturated Drain Current I 3.8 4.3 A V = 6.0 V, V = 2.0 V
DS DS GS
Drain-Source Breakdown Voltage V 100 V V = -8 V, I = 4.8 mA
(BR)DSS DC GS D
3
RF Characteristics (T = 25C, F = 6.0 GHz unless otherwise noted)
C 0
Gain G 16 - dB V = 40 V, I = 150 mA, P = 0 dBm
DD DQ IN
4
Output Power P 29 W V = 40 V, I = 150 mA, P = 34 dBm
OUT DD DQ IN
4
Drain Efficiency 55 - % V = 40 V, I = 150 mA, P = 34 dBm
DD DQ IN
No damage at all phase angles,
4
Output Mismatch Stress VSWR - 10 : 1 - Y
V = 40 V, I = 150 mA, P = 29 W
DD DQ OUT
Dynamic Characteristics
5
Input Capacitance C 5.9 pF V = 40 V, V = -8 V, f = 1 MHz
GS DS gs
5
Output Capacitance C 2 pF V = 40 V, V = -8 V, f = 1 MHz
DS DS gs
Feedback Capacitance C 0.21 pF V = 40 V, V = -8 V, f = 1 MHz
GD DS gs
Notes:
1
Measured on wafer prior to packaging
2
Scaled from PCM data
3
Measured in CGHV1F025S-AMP
4
Pulsed 100 s, 10% duty cycle
5
Includes package
Cree, Inc.
4600 Silicon Drive
Copyright 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
registered trademarks of Cree, Inc.
Fax: +1.919.869.2733
www.cree.com/rf
2
CGHV1F025S Rev 1.3