CMPA0060002F 2 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Description Crees CMPA0060002F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. PN: CMPA0060002F This MMIC employs a distributed (traveling-wave) amplifier design Package Type: 780019 approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. Typical Performance Over 20 MHz - 6.0 GHz (T = 25C) C Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain 19.9 18.8 17.8 16.8 16.8 17.5 18.5 16.5 dB 1 Saturated Output Power, P 4.3 4.1 4.5 4.2 3.7 3.9 4.8 3.7 W SAT 1 Power Gain P 14.7 13.1 12.6 12.2 12.6 10.9 12.2 9.5 dB SAT 1 PAE P 34 28 29 28 24 26 33 20 % SAT 1 Note : P is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA. SAT 2 Note : V = 28 V, I = 100 mA DD DQ Features Applications Ultra Broadband Amplifiers 17 dB Small Signal Gain Fiber Drivers 3 W Typical P SAT Test Instrumentation Operation up to 28 V EMC Amplifier Drivers High Breakdown Voltage High Temperature Operation 0.5 x 0.5 total product size Figure 1. Rev 3.1 October 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCMPA0060002F 2 Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Drain-source Voltage V 84 VDC DSS Gate-source Voltage V -10, +2 VDC GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4 mA GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 4.3 C/W JC 2,3 Case Operating Temperature T -40, +150 C C Note 1 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 2 Measured for the CMPA0060002F at P = 2 W. DISS Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 1 Gate Threshold Voltage V -3.8 -3.0 -2.7 V V = 20 V, I = 2 mA (GS)TH DS D Gate Quiescent Voltage V -2.7 VDC V = 28 V, I = 100 mA (GS)Q DD DQ Saturated Drain Current I 1.4 A V = 6.0 V, V = 2.0 V DC DS GS RF Characteristics Small Signal Gain S21 13.5 17 21.5 dB V = 28 V, I = 100 mA DD DQ Input Return Loss S11 -9 -5 dB V = 28 V, I = 100 mA DD DQ Output Return Loss S22 -9 -5 dB V = 28 V, I = 100 mA DD DQ Power Output P 2 3 W V = 28 V, I = 100 mA, Freq = 4.0 GHz, P = 23 dBm OUT DD DQ IN Power Added Efficiency PAE 23 % V = 28 V, I = 100 mA, Freq = 4.0 GHz, P = 23 dBm DD DQ IN Power Gain G 10 dB V = 28 V, I = 100 mA, Freq = 4.0 GHz, P = 23 dBm P DD DQ IN No damage at all phase angles, V = 28 V, I = 100 mA, DD DQ Output Mismatch Stress VSWR 5 : 1 Y P = 23 dBm IN Note 1 The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure. Rev 3.1 October 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com