CMPA0060025F 25 W, 20 MHz-6000 MHz, GaN MMIC Power Amplifier Description Crees CMPA0060025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. PN: CMPA0060025F This MMIC enables extremely wide bandwidths to be achieved in a small Package Type: 780019 footprint screw-down package. Typical Performance Over 20 MHz - 6.0 GHz (T = 25C) C Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain 21.4 20.1 19.3 16.7 16.6 16.8 15.7 15.5 dB Output Power P = 32 dBm 26.9 30.2 26.3 23.4 24.5 24.0 20.9 18.6 W IN Power Gain P = 32 dBm 12.3 12.8 12.2 11.7 11.9 11.8 11.3 10.7 dB IN Efficiency P = 32 dBm 63 55 40 31 33 31 28 26 % IN Note1: V = 50 V, I = 500 mA DD DQ Features Applications Ultra Broadband Amplifiers 17 dB Small Signal Gain Test Instrumentation 25 W Typical P SAT EMC Amplifier Drivers Operation up to 50 V High Breakdown Voltage High Temperature Operation 0.5 x 0.5 total product size Figure 1. Large Signal Models Available for ADS and MWO Rev 4.1 October 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCMPA0060025F 2 Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Drain-source Voltage V 84 VDC DSS Gate-source Voltage V -10, +2 VDC GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 4 mA GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 3.3 C/W JC 2,3 Case Operating Temperature T -40, +150 C C Note 1 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library 2 Measured for the CMPA0060025F at P = 32 dBm. IN Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics 2 Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 20 V, I = 20 mA (GS)TH DS D Gate Quiescent Voltage V -2.7 VDC V = 50 V, I = 500 mA, P = 32 dBm (GS)Q DD DQ IN Saturated Drain Current I 12 A V = 12 V, V = 2.0 V DC DS GS 1 RF Characteristics Power Output at P 4.5 GHz P 41.0 42.8 dBm V = 50 V, I = 500 mA, P = 32 dBm OUT OUT1 DD DQ IN Power Output at P 5.0 GHz P 41.0 43.3 dBm V = 50 V, I = 500 mA, P = 32 dBm OUT OUT2 DD DQ IN Power Output at P 6.0 GHz P 41.0 42.9 dBm V = 50 V, I = 500 mA, P = 32 dBm OUT OUT3 DD DQ IN Drain Efficiency at P 4.5 GHz 1 18.0 24.1 % V = 50 V, I = 500 mA, P = 32 dBm OUT DD DQ IN Drain Efficiency at P 5.0 GHz 2 18.0 28.0 % V = 50 V, I = 500 mA, P = 32 dBm OUT DD DQ IN Drain Efficiency at P 6.0 GHz 3 18.0 27.2 % V = 50 V, I = 500 mA, P = 32 dBm OUT DD DQ IN No damage at all phase angles, Output Mismatch Stress VSWR 5 : 1 Y V = 50 V, I = 500 mA, P = 32 dBm DD DQ IN Small Signal RF Characteristics Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Conditions S21 (dB) S11 (dB) S22 (dB) 0.02 GHz - 0.25 GHz 18.0 19.3 23.7 -4.1 -2.5 -8.5 -4.5 V = 50 V, I = 500 mA DD DQ 0.25 GHz - 0.5 GHz 18.0 19.8 22.0 -6.8 -3.5 -8.9 -4.5 V = 50 V, I = 500 mA DD DQ 0.5 GHz - 1.0 GHz 15.5 18.6 22.0 -15.3 -6.5 -6.7 -4.5 V = 50 V, I = 500 mA DD DQ 1.0 GHz - 2.0 GHz 15.5 18.6 22.0 -15.3 -12.5 -6.7 -4.5 V = 50 V, I = 500 mA DD DQ 2.0 GHz - 3.0 GHz 13.0 18.6 20.0 -15.3 -12.5 -6.0 -2.5 V = 50 V, I = 500 mA DD DQ 3.0 GHz - 6.0 GHz 13.0 16.3 20.0 -14.2 -6.5 -5.3 -2.5 V = 50 V, I = 500 mA DD DQ Note 1 P is defined as P = 32 dBm. OUT IN 2 The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure. Rev 4.1 October 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com