PN: CMPA1D1E025F Package Type:440213 CMPA1D1E025F 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier Crees CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 m gate length fabrication process. The Ku Band 25W MMIC is targeted for commercial Ku Band satellite communications applications. It offers high gain and superior efficiency while meets OQPSK linearity required for Satcom applications at 3dB backed off Psat operations. This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic flanged package. Typical Performance Over 13.75-14.5 GHz (T = 25C) C Parameter 13.75 GHz 14.0 GHz 14.25 GHz 14.5 GHz Units Small Signal Gain 24 24.5 24.5 24 dB Linear Output Power 24 23 21 20 W Power Gain 21 21 20 20 dB Power Added Efficiency 22 20 18 18 % 1 Note : Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2. Features Applications Satellite Communications Uplink 24 dB Small Signal Gain 40 W Typical Pulsed P SAT Operation up to 40 V 20 W linear power under OQPSK Class A/B high gain, high efficiency 50 ohm MMIC Ku Band high power amplifier Subject to change without notice. 1 www.cree.com/rf Rev 3.0 May 2017Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Power Dissipation P 94 W DISS Storage Temperature T -55, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 10 mA 25C GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 1.5 C/W P = 94 W, 85C JC DISS Case Operating Temperature T -40, +85 C CW, P = 94 W C DISS Note: 1 Refer to the Application Note on soldering at www.cree.com/products/wireless appnotes.asp Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold V -3.8 -3.0 -2.3 V V = 10 V, I = 18.2 mA GS(TH) DS D Gate Quiscent Voltage V -2.7 V V = 40 V, I = 240 mA Q DS D 2 Saturated Drain Current I 14.6 16.4 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 18.2 mA BD GS D 3 RF Characteristics Small Signal Gain S21 20.9 24 dB V = 40 V, I = 240 mA, P = -15 dBm DD DQ IN Input Return Loss S11 -7 -6 dB V = 40 V, I = 240 mA, P = -15 dBm DD DQ IN Output Return Loss S22 -7 -6 dB V = 40 V, I = 240 mA, P = -15 dBm DD DQ IN No damage at all phase angles, V = 40 V, I = 240 mA, DD DQ Output Mismatch Stress VSWR 5:1 Y P = 41 dBm OQPSK OUT Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in the CMPA1D1E025F-AMP Cree, Inc. Copyright 2014-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 Fax: +1.919.869.2733 2 CMPA1D1E025F Rev 3.0 www.cree.com/RF