CMPA5259025F 25 W, 5.2 5.9 GHz, 28 V, GaN MMIC for Radar Power Amplifiers Description Wolfspeeds CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PN : CMPA5259025F Package Type : 440219 Features Applications 30 dB Small Signal Gain Radar 50% Efficiency at P SAT Operation up to 28 V High Breakdown Voltage Typical Performance Over 5.2 5.9 GHz (T = 25C) of Demonstration Amplifier C Parameter 5.2 GHz 5.5 GHz 5.9 GHz Units Small Signal Gain 33.6 31.9 32.2 dB 1 Output Power 38.5 39.6 34.8 W 1 Efficiency 53.5 51.3 47.2 % Input Return Loss -13.5 -15.5 -4.8 dB Note: 1 100 sec Pulse Width, 10% Duty Cycle, P = 22 dBm IN Rev. 2.1, June 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.comCMPA5259025F 2 Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Storage Temperature T -55, +150 C STG Operating Junction Temperature T 225 C J Soldering Temperature T 245 C S Screw Torque 40 in-oz Forward Gate Current I 9.6 mA 25C G 1 Thermal Resistance, Junction to Case R 1.66 C/W 100 s, 10%, 85C JC Case Operating Temperature T -40, +105 C C 1 Notes: Measured for the CMPA5259025F at P = 35 W. DISS Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.6 -2.8 -2.4 V V = 10 V, I = 16.5 mA GS(th) DC DS D Gate Quiescent Voltage V - -2.7 - V V = 28 V, I = 1.2 A GS(Q) DC DD D Saturated Drain Current I 6.9 9.6 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 V V = -8 V, I = 16.5 mA BD DC GS D 2 RF Characteristics Small Signal Gain S21 24 32 dB V = 28 V, I = 500 mA, Freq = 5.2 - 5.9 GHz, P = -20 dBm DD DQ IN Input Return Loss S11 -10 dB V = 28 V, I = 500 mA, Freq = 5.2 - 5.9 GHz, P = -20 dBm DD DQ IN Output Return Loss S22 -15 -4 dB V = 28 V, I = 500 mA, Freq = 5.2 - 5.9 GHz, P = -20 dBm DD DQ IN Output Power P 25 38.5 W V = 28 V, I = 500 mA, Freq = 5.2 GHz, P = 22 dBm OUT DD DQ IN Output Power P 25 39.6 W V = 28 V, I = 500 mA, Freq = 5.5 GHz, P = 22 dBm OUT DD DQ IN Output Power P 25 34.8 W V = 28 V, I = 500 mA, Freq = 5.9 GHz, P = 22 dBm OUT DD DQ IN Power Added Efficiency PAE 40 54 % V = 28 V, I = 500 mA, Freq = 5.2 GHz, P = 22 dBm DD DQ IN Power Added Efficiency PAE 40 51 % V = 28 V, I = 500 mA, Freq = 5.5 GHz, P = 22 dBm DD DQ IN Power Added Efficiency PAE 35 47 % V = 28 V, I = 500 mA, Freq = 5.9 GHz, P = 22 dBm DD DQ IN Power Gain G 24 dB V = 28 V, I = 500 mA, Freq = 5.2 GHz, P = 22 dBm P DD DQ IN Power Gain G 24 dB V = 28 V, I = 500 mA, Freq = 5.5 GHz, P = 22 dBm P DD DQ IN Power Gain G 23.4 dB V = 28 V, I = 500 mA, Freq = 5.9 GHz, P = 22 dBm P DD DQ IN No damage at all phase angles, V = 28 V, I = 500 mA, DD DQ Output Mismatch Stress VSWR 3:1 Y P = 22 dBm IN Notes: 1 Measured on wafer prior to packaging. 2 Measured in CMPA5259025F-TB test fixture at Pulse Width = 100 s, Duty Cycle = 10% Rev. 2.1, June 2020 4600 Silicon Drive Durham, NC 27703 wolfspeed.com