PN: CMPA801B025F/ CMPA801B025P Package Type: 440213 / 440216 CMPA801B025 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Crees CMPA801B025 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC is available in a 10-lead metal/ceramic flanged package (CMPA801B025F) or small form- factor pill package (CMPA801B025P) for optimal electrical and thermal performance. Typical Performance Over 8.5-11.0 GHz (T = 25C) C Parameter 8.5 GHz 10.0 GHz 11.0 GHz Units 1 Output Power 38.0 37.0 35.5 W 1 Output Power 45.8 45.7 45.5 dBm 1 Power Added Efficiency 37.0 36.0 35.0 % 1 Note : Measured in CMPA801B025F-AMP under 100 uS pulse width, 10% duty. Features Applications 8.5 - 11.0 GHz Operation Marine Radar 37 W P typical Communications OUT 16 dB Power Gain Satellite Communication Uplink 36 % Typical PAE 50 Ohm internally matched <0.1 dB Power droop Subject to change without notice. 1 www.cree.com/rf Rev 4.0 May 2017Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 V 25C DSS DC Gate-source Voltage V -10, +2 V 25C GS DC Power Dissipation P 77 W DISS Storage Temperature T -55, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 13 mA 25C GMAX 1 Soldering Temperature T 245 C S Screw Torque 40 in-oz Thermal Resistance, Junction to Case R 1.22 C/W Pulse Width = 100 s, Duty Cycle = 10%, P = 55 W JC DISS Thermal Resistance, Junction to Case R 1.80 C/W CW, P = 55 W, 85C JC DISS Case Operating Temperature T -40, +130 C Pulse Width = 100 s, Duty Cycle = 10%, P = 55 W C DISS Case Operating Temperature T -40, +90 C CW, P = 55 W C DISS Note: 1 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library Electrical Characteristics (Frequency = 8.5 GHz to 11.0 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold V -3.8 -3.0 -2.3 V V = 10 V, I = 13.2 mA GS(TH) DS D Gate Quiscent Voltage V -2.7 V V = 28 V, I = 1.2 A Q DS D 2 Saturated Drain Current I 10.6 13.0 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 13.2 mA BD GS D 3 RF Characteristics V = 28 V, I = 1.2 A, DD DQ Small Signal Gain S21 20 24 dB P = -20 dBm IN Input Return Loss S11 6.0 dB V = 28 V, I = 1.2 A DD DQ Output Return Loss S22 6.0 dB V = 28 V, I = 1.2 A DD DQ No damage at all phase angles, V = DD 28 V, I = 1.2 A, DQ Output Mismatch Stress VSWR 5:1 Y Pulse Width = 100 s, Duty Cycle = 10%, P = 30 dBm IN Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in the CMPA801B025F-AMP. Cree, Inc. Copyright 2011-2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA801B025 Rev 4.0