V 900 V
DS
I @ 25C 11.5 A
D
E4D10120A
R 280 m
DS(on)
Silicon Carbide Schottky Diode
E-Series Automotive
Features Package
4th Generation SiC Merged PIN Schottky Technology
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
AEC-Q101 Qualified and PPAP Capable
Humidity Resistant
Benefits TO-220-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
PIN 1
Reduction of Heat Sink Requirements
CASE
Parallel Devices Without Thermal Runaway
PIN 2
Ideal for Outdoor Environments
Applications
Boost diodes in PFC or DC/DC stages
Part Number Package Marking
Free Wheeling Diodes in Inverter stages
AC/DC converters
E4D10120A TO-220-2 E4D10120
Automotive and Traction Power Conversion
PV Inverters
Maximum Ratings (T = 25 C unless otherwise specified)
C
Symbol Parameter Value Unit Test Conditions Note
V Repetitive Peak Reverse Voltage 1200 V
RRM
V DC Peak Reverse Voltage 1200 V
R
33 T =25C
C
I Continuous Forward Current 16 A T =135C Fig. 3
F C
10 T =156C
C
166 T =25C
C
P Power Dissipation W Fig. 4
tot
72 T =110C
C
44 T =25C, t =10 ms, Half Sine Pulse
C P
I Repetitive Peak Forward Surge Current A
FRM
26 T =110C, t =10 ms, Half Sine Pulse
C P
dV/dt Diode dV/dt ruggedness 250 V/ns V =0-960V
R
-55 to
T , T Operating Junction and Storage Temperature C
J stg
+175
1 Nm M3 Screw
TO-220 Mounting Torque
8.8 lbf-in 6-32 Screw
1 E4D10120A Rev. -, 07-2019Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
1.5 1.8 I = 10 A T =25C
F J
V Forward Voltage V Fig. 1
F
2.2 I = 10 A T =175C
F J
30 200 V = 1200 V T =25C
R J
I Reverse Current A Fig. 2
R
55 V = 1200 V T =175C
R J
V = 800 V, I = 10A
R F
Q Total Capacitive Charge 56 nC di/dt = 200 A/s Fig. 5
C
T = 25C
J
777 V = 0 V, T = 25C, f = 1 MHz
R J
C Total Capacitance 51 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6
R J
44 V = 800 V, T = 25C, f = 1 MHz
R J
E Capacitance Stored Energy 17 J V = 800 V Fig. 7
C R
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
R Thermal Resistance from Junction to Case 0.9 C/W Fig. 8
JC
Typical Performance
600
20
18
T = -55C
J
500
T = 25C
J
16
T = 75C
J
T = 125C
14 J
400
T = 175C
J
12
T = -55 C
J
10
300
T = 25 C
J
8
T = 75 C
J
200
6
T = 125 C
J
4
100
T = 175 C
J
2
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0 500 1000 1500 2000
Foward Voltage, V (V)
VVV (V) (V) (V) V (V)
F
ReverseV Vo (V)ltage, V (V)
FFF R
R
R
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
2 E4D10120A Rev. -, 07-2019
Foward Current, I (A)
F
II (A) (A)
IF (A)
F
F
Reverse Leakage Current, I (uA)
RR
I (A)
I (A)
R
R