VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES 175 C T operation J Center tap configuration Low forward voltage drop 2 1 High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 3 2 strength and moisture resistance 2 D PAK (TO-263AB) 3 TO-262AA High frequency operation Base Base Guard ring for enhanced ruggedness and long term common common reliability cathode cathode 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc 99912 1 1 Common 3 3 Common Anode cathode Anode Anode cathode Anode DESCRIPTION VS-43CTQ...-1-M3 VS-43CTQ...S-M3 This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary PRIMARY CHARACTERISTICS barrier technology allows for reliable operation up to 175 C I 2 x 20 A F(AV) junction temperature. Typical applications are in switching V 80 V, 100 V R power supplies, freewheeling diodes, and reverse battery V at I 0.67 V F F protection. I max. 11 mA at 125 C RM T max. 175 C J E 7.50 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 80/100 V RRM I t = 5 s sine 850 A FSM p V 20 A , T = 125 C (per leg) 0.67 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS VS-43CTQ080S-M3 VS-43CTQ100S-M3 PARAMETER SYMBOL UNITS VS-43CTQ080-1-M3 VS-43CTQ100-1-M3 Maximum DC reverse voltage V R 80 100 V Maximum working peak reverse voltage V RWM Revision: 27-Oct-17 Document Number: 94942 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 20 forward current I 50 % duty cycle at T = 135 C, rectangular waveform F(AV) C per device 40 See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 850 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 275 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A 0.81 T = 25 C J 40 A 0.98 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.67 T = 125 C J 40 A 0.81 T = 25 C 1 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 11 J Threshold voltage V 0.71 V F(TO) T = T maximum J J Forward slope resistance r 0.43 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1480 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 175 C J Stg temperature range Maximum thermal resistance, 2.0 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.0 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 43CTQ080S 2 Case style D PAK (TO-263AB) 43CTQ100S Marking device 43CTQ080-1 Case style TO-262AA 43CTQ100-1 Revision: 27-Oct-17 Document Number: 94942 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000