VS-45EPS16LHM3, VS-45APS16LHM3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 45 A FEATURES Very low forward voltage drop Glass passivated pellet chip junction 2 AEC-Q101 qualified meets JESD 201 class 1A 1 1 whisker test 2 Flexible solution for reliable AC power 3 3 rectification TO-247AD 2L TO-247AD 3L Base cathode Base cathode High surge, low V rugged blocking diode for DC charging F 2 2 stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS 13 1 3 Cathode Anode Anode Anode On-board and off-board EV / HEV battery chargers VS-45EPS16LHM3 VS-45APS16LHM3 Renewable energy inverters PRIMARY CHARACTERISTICS DESCRIPTION I 45 A F(AV) High voltage rectifiers optimized for very low forward V 1600 V R voltage drop with moderate leakage. V at I 1.16 V F F These devices are intended for use in main rectification I 500 A FSM (single or three phase bridge). T max. 150 C J Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 45 A F(AV) V 1600 V RRM I 500 A FSM V 20 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM I RRM RRM NON-REPETITIVE PEAK REVERSE PART NUMBER PEAK REVERSE VOLTAGE AT 150 C VOLTAGE V mA V VS-45EPS16LHM3 1600 1700 1 VS-45APS16LHM3 1600 1700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 109 C, 180 conduction half sine wave 45 F(AV) C 10 ms sine pulse, rated V applied 420 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 500 10 ms sine pulse, rated V applied 884 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 1250 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 12 500 A s Revision: 22-Feb-18 Document Number: 96450 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-45EPS16LHM3, VS-45APS16LHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 45 A, T = 25 C 1.16 V FM J Forward slope resistance r 7.6 m t T = 150 C J Threshold voltage V 0.72 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUES UNITS Maximum junction and storage temperature range T , T -40 to +150 C J Stg Maximum thermal resistance, junction to case R DC operation 0.40 thJC Maximum thermal resistance, junction to ambient R 40 C/W thJA Typical thermal resistance, case to heatsink R Mounting surface, smooth, and greased 0.25 thCS 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Case style TO-247AD 2L 45EPS16LH Marking device Case style TO-247AD 3L 45APS16LH 150 150 R (DC) = 0.40 C/W R (DC) = 0.40 C/W thJC thJC 140 140 130 Conduction angle 130 120 120 110 110 100 100 120 30 60 90 180 120 60 DC Conduction 90 90 90 180 angle 30 80 80 0 1020304050607080 0 1020304050 Average On Average On-State Current (A) - State Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 22-Feb-18 Document Number: 96450 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Max. Allowable Case Temperature (C) Max. Allowable Case Temperature (C)