VS-45EPS12LHM3, VS-45APS12LHM3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 45 A FEATURES Very low forward voltage drop Glass passivated pellet chip junction 2 AEC-Q101 qualified meets JESD 201 class 1A 1 1 whisker test 2 Flexible solution for reliable AC power 3 3 rectification TO-247AD 2L TO-247AD 3L High surge, low V rugged blocking diode for DC charging F Base cathode Base cathode stations 2 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS 13 1 3 On-board and off-board EV / HEV battery chargers Cathode Anode Anode Anode Renewable energy inverters VS-45APS12LHM3 VS-45EPS12LHM3 DESCRIPTION PRIMARY CHARACTERISTICS High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. I 45 A F(AV) V 1200 V These devices are intended for use in main rectification R V at I 1.14 V (single or three phase bridge). F F I 500 A FSM T max. 150 C J Package TO-247AD 2L, TO-247AD 3L Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 45 A F(AV) V 1200 V RRM I 500 A FSM V 20 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM I RRM RRM NON-REPETITIVE PEAK REVERSE PART NUMBER PEAK REVERSE VOLTAGE AT 150 C VOLTAGE V mA V VS-45EPS12LHM3 1200 1300 1.0 VS-45APS12LHM3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 109 C, 180 conduction half sine wave 45 F(AV) C 10 ms sine pulse, rated V applied 420 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 500 10 ms sine pulse, rated V applied 884 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 1250 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 12 500 A s Revision: 22-Feb-18 Document Number: 96128 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-45EPS12LHM3, VS-45APS12LHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 45 A, T = 25 C 1.14 V FM J Forward slope resistance r 7.16 m t T = 150 C J Threshold voltage V 0.74 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.4 thJC unction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Case style TO-247AD 2L 45EPS12LH Marking device Case style TO-247AD 3L 45APS12LH 160 150 R (DC) = 0.4 C/W R (DC) = 0.4 C/W thJC thJC 150 140 140 130 Conduction angle Conduction angle 130 120 180 120 30 30 110 60 110 90 100 100 60 90 120 90 90 180 DC 120 80 80 01020304050607080 01020304050 I -Average On-State current (A) I -Average On-State Current (A) T(AV) T(AV) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 22-Feb-18 Document Number: 96128 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)