VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 40 A FEATURES Base cathode Glass passivated pellet chip junction 150 C max. operating junction temperature 2 Low forward voltage drop and short reverse recovery time 1 Available Designed and qualified according to 33 JEDEC -JESD 47 TO-247AC 2L 13 Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as I 40 A F(AV) well as in input rectification where severe restrictions on V 200 V, 400 V, 600 V R conducted EMI should be met. V at I 1.25 V F F I 475 A FSM DESCRIPTION t 60 ns rr The VS-40EPF006-M3 and VS-40APF006-M3 fast soft T max. 150 C J recovery rectifier series has been optimized for combined Package TO-247AC 2L short reverse recovery time and low forward voltage drop. Circuit configuration Single The glass passivation ensures stable reliable operation in Snap factor 0.5 the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 40 A F(AV) V 200 to 600 V RRM I 475 A FSM V 10 A, T = 25 C 1 V F J t 1 A, - 100 A/s 60 ns rr T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-40EPF02-M3 200 300 VS-40EPF04-M3 400 500 8 VS-40EPF06-M3 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 40 F(AV) C 10 ms sine pulse, rated V applied 400 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 475 10 ms sine pulse, rated V applied 800 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 1131 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 11 310 A s Revision: 29-Nov-2019 Document Number: 94102 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40EPF0.-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 40 A, T = 25 C 1.25 V FM J Forward slope resistance r 4.4 m t T = 150 C J Threshold voltage V 1.1 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 8.0 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 180 ns FM rr I at 40 A F pk t rr Reverse recovery current I 25 A/s 3.2 A rr t 25 C dir Reverse recovery charge Q 0.5 C rr dt Q rr Snap factor S 0.5 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.6 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 40EPF02 Marking device Case style TO-247AC 2L 40EPF04 40EPF06 Revision: 29-Nov-2019 Document Number: 94102 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000