VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 40 A FEATURES Very low forward voltage drop 150 C max. operating junction temperature Glass passivated pellet chip junction 2 Designed and qualified according to 3 3 2 JEDEC -JESD 47 1 1 Material categorization: TO-247AC modified TO-247AC Available for definitions of compliance please see Base Base cathode cathode www.vishay.com/doc 99912 + 2 2 APPLICATIONS Input rectification Vishay Semiconductors switches and output rectifiers 13 which are available in identical package outlines Anode -- Anode 13 Cathode Anode DESCRIPTION VS-40EPS16PbFVS-40APS16PbF VS-40EPS16-M3 VS-40APS16-M3 High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. These devices are intended for use in main rectification PRODUCT SUMMARY (single or three phase bridge). Package TO-247AC modified (2 pins), TO-247AC I 40 A F(AV) V 1600 V R V at I 1.14 V F F I 475 A FSM T max. 150 C J Diode variation Single die MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 40 A F(AV) V 1600 V RRM I 475 A FSM V 20 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-40EPS16PbF VS-40EPS16-M3 1600 1700 1 VS-40APS16PbF VS-40APS16-M3 Revision: 12-Feb-16 Document Number: 94344 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-40EPS16PbF, VS-40APS16PbF, VS-40EPS16-M3, VS-40APS16-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 40 F(AV) C 10 ms sine pulse, rated V applied 400 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 475 10 ms sine pulse, rated V applied 800 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 1131 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 11 310 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 40 A, T = 25 C 1.14 V FM J Forward slope resistance r 7.6 m t T = 150 C J Threshold voltage V 0.72 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.6 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, flat, smooth, and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Case style TO-247AC modified (JEDEC) 40EPS16 Marking device Case style TO-247AC 40APS16 VS-40EPS16 VS-40EPS16 R (DC) = 0.6 K/W R (DC) = 0.6 K/W thJC thJC Conduction angle Conduction period 30 30 60 90 60 120 90 180 120 180 DC 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 12-Feb-16 Document Number: 94344 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 150 150 145 140 140 135 130 130 125 120 120 115 110 105 110 100 95 100 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)