VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 2 1 175 C operating junction temperature 1 Meets MSL level 1, per J-STD-020, LF maximum peak of 3 2 245 C 2 TO-262AA D PAK (TO-263AB) 3 Material categorization: for definitions of compliance Base Base please see www.vishay.com/doc 99912 Common Common Cathode Cathode 2 2 DESCRIPTION / APPLICATIONS Vishay Semiconductors 200 V series are the state of the art 2 2 hyperfast recovery rectifiers designed with Common Common optimized performance of forward voltage drop and Cathode Cathode 1 3 1 3 hyperfast recovery time. Anode Anode Anode Anode The planar structure and the platinum doped life VS-30CTH02S-M3 VS-30CTH02-1-M3 time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification PRIMARY CHARACTERISTICS stage of SMPS, UPS, DC/DC converters as well as I 2 x 15 A F(AV) freewheeling diode in low voltage inverters and chopper V 200 V R motor drives. V at I 0.78 V F F Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over t typ. 30 ns rr dissipation in the switching element and snubbers. T max. 175 C J 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 200 V RRM per diode T = 159 C 15 C Average rectified forward current I F(AV) per device 30 A Non-repetitive peak surge current I T = 25 C 200 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , V I = 100 A 200 - - V BR R R blocking voltage I = 15 A - 0.92 1.05 F Forward voltage V V F I = 15 A, T = 125 C - 0.78 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 125 C, V = V rated - 5 300 J R R Junction capacitance C V = 200 V - 57 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 24-Oct-17 Document Number: 96234 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30CTH02S-M3, VS-30CTH02-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -26 - J I = 15 A T = 125 C F - 40 - J dI /dt = 200 A/s F T = 25 C - 2.8 - J V = 160 V R Peak recovery current I A RRM T = 125 C - 6.0 - J T = 25 C - 37 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - 175 C J Stg Thermal resistance, junction to case per diode R -- 1.1 C/W thJC -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) 30CTH02S Marking device Case style TO-262 30CTH02-1 100 100 T = 175 C J T = 150 C J 10 T = 125 C J 1 T = 100 C J T = 175 C J T = 125 C J T = 75 C 10 0.1 J T = 25 C J T = 50 C J 0.01 T = 25 C J 0.001 0.0001 1 0 50 100 150 200 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 24-Oct-17 Document Number: 96234 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (A) R