VS-30CTH02SPbF, VS-30CTH02-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base Base Common Common AEC-Q101 qualified Cathode Cathode Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc 99912 2 2 DESCRIPTION / APPLICATIONS Common Common Cathode Cathode Vishay Semiconductors 200 V series are the state of the art 1 3 1 3 Anode Anode Anode Anode hyperfast recovery rectifiers designed with VS-30CTH02SPbF VS-30CTH02-1PbF optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life PRODUCT SUMMARY time control, guarantee the best overall 2 Package TO-263AB (D PAK), TO-262AA performance, ruggedness and reliability characteristics. I 2 x 15 A These devices are intended for use in the output rectification F(AV) stage of SMPS, UPS, DC/DC converters as well as V 200 V R freewheeling diode in low voltage inverters and chopper V at I 0.78 V F F motor drives. t typ. 30 ns rr Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over T max. 175 C J dissipation in the switching element and snubbers. Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Peak repetitive reverse voltage V 200 V RRM per diode T = 159 C 15 C Average rectified forward current I F(AV) per device 30 A Non-repetitive peak surge current I T = 25 C 200 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , V I = 100 A 200 - - V BR R R blocking voltage I = 15 A - 0.92 1.05 F Forward voltage V V F I = 15 A, T = 125 C - 0.78 0.85 F J V = V rated - - 10 R R Reverse leakage current I A R T = 125 C, V = V rated - 5 300 J R R Junction capacitance C V = 200 V - 57 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 09-Jul-15 Document Number: 94015 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30CTH02SPbF, VS-30CTH02-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -26 - J I = 15 A F T = 125 C - 40 - J dI /dt = 200 A/s F T = 25 C - 2.8 - J V = 160 V R Peak recovery current I A RRM T = 125 C - 6.0 - J T = 25 C - 37 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - 175 C J Stg Thermal resistance, junction to case per diode R -- 1.1 C/W thJC -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case styleTO-263AB (D PAK) 30CTH02S Marking device Case style TO-262 30CTH02-1 Revision: 09-Jul-15 Document Number: 94015 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000