VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C Designed and qualified according to 2 JEDEC -JESD 47 3 Material categorization: 13 1 for definitions of compliance please see -- 2 Anode Anode TO-263AB (D PAK) www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY Output rectification and freewheeling in inverters, 2 Package TO-263AB (D PAK) choppers and converters I 20 A F(AV) Input rectifications where severe restrictions on V 200 V, 400 V, 600 V conducted EMI should be met R V at I 1.3 V F F DESCRIPTION I 300 A FSM The VS-20ETF..SPbF soft recovery rectifier series has been t 60 ns rr optimized for combined short reverse recovery time and low T max. 150 C J forward voltage drop. Diode variation Single die The glass passivation ensures stable reliable operation in Snap factor 0.6 the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 200 to 600 V RRM I 300 A FSM V 10 A, T = 25 C 1.2 V F J t 1 A, 100 A/s 60 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF02SPbF 200 300 VS-20ETF04SPbF 400 500 5 VS-20ETF06SPbF 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 97 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Revision: 11-Feb-16 Document Number: 94097 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETF..SPbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A, T = 25 C 1.30 J Maximum forward voltage drop V V FM 60 A, T = 25 C 1.67 J Forward slope resistance r 12.5 m t Threshold voltage V T = 150 C 0.9 V F(TO) J T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 5.0 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 160 ns FM rr I at 20 A F pk t rr Reverse recovery current I 100 A/s 10 A rr t t a b t dir 25 C Reverse recovery charge Q 1.25 C rr dt Q rr I Snap factor S Typical 0.6 RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case C/W Maximum thermal resistance (1) R 40 thJA junction to ambient (PCB mount) Soldering temperature T 260 C S 2g Approximate weight 0.07 oz. 20ETF02S 2 Marking device Case style TO-263AB (D PAK) 20ETF04S 20ETF06S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note AN-994. Revision: 11-Feb-16 Document Number: 94097 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000