VS-20CTH03SPbF, VS-20CTH03-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Base Base AEC-Q101 qualified common common cathode cathode Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized 2 2 performance of forward voltage drop and hyperfast 3 1 3 1 Common Common Anode cathode Anode Anode cathode Anode recovery time. The planar structure and the platinum doped life time control VS-20CTH03SPbFVS-20CTH03-1PbF guarantee the best overall performance, ruggedness and reliability characteristics. PRODUCT SUMMARY These devices are intended for use in the output rectification 2 Package TO-263AB (D PAK), TO-262AA stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper I 2 x 10 A F(AV) motor drives. V 300 V R Their extremely optimized stored charge and low recovery V at I 0.85 V F F current minimize the switching losses and reduce over dissipation in the switching element and snubbers. t max. 35 ns rr T max. 175 C J Diode variation Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Peak repetitive reverse voltage V 300 V RRM per diode T = 160 C 10 C Average rectified forward current I F(AV) per device 20 A Non-repetitive peak surge current I T = 25 C 120 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 10 A - 1.05 1.25 F Forward voltage V F I = 10 A, T = 125 C - 0.85 0.95 F J V = V rated - - 20 R R Reverse leakage current I A R T = 125 C, V = V rated - 6 200 J R R Junction capacitance C V = 300 V - 30 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 09-Jul-15 Document Number: 94011 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20CTH03SPbF, VS-20CTH03-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 1.0 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -31- J = 125 C - 42 - T J I = 10 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.6 - J V = 200 V R T = 25 C - 36 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R --1.5C/W thJC junction to case per diode -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style TO-263AB (D PAK) 20CTH03S Marking device Case style TO-262AA 20CTH03-1 Revision: 09-Jul-15 Document Number: 94011 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000