VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
175 C T operation
J
Center tap configuration
Low forward voltage drop
2
High frequency operation
1
1
High purity, high temperature epoxy
3
2
encapsulation for enhanced mechanical strength
2
D PAK (TO-263AB) 3 TO-262AA
and moisture resistance
Base Base Guard ring for enhanced ruggedness and long term
common common
reliability
cathode cathode
Meets MSL level 1, per J-STD-020, LF maximum peak
2 2
of 245 C
Designed and qualified according to JEDEC -JESD 47
Material categorization: for definitions of compliance
2 2
please see www.vishay.com/doc?99912
1 3 1 3
Common
Common
cathode
Anode Anode Anode cathode Anode
DESCRIPTION
VS-20CTQ...S-M3 VS-20CTQ...-1-M3
The VS-20CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 C junction temperature. Typical
PRIMARY CHARACTERISTICS
applications are in switching power supplies, converters,
I 2 x 10 A
F(AV)
freewheeling diodes, and reverse battery protection.
V 35 V, 40 V, 45 V
R
V at I 0.57 V
F F
I 15 mA at 125 C
RM
T max. 175 C
J
E 13 mJ
AS
2
Package D PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUESUNITS
I Rectangular waveform 20 A
F(AV)
V Range 35 to 45 V
RRM
I t = 5 s sine 1060 A
FSM p
V 10 A , T = 125 C (per leg) 0.57 V
F pk J
T Range -55 to +175 C
J
VOLTAGE RATINGS
VS-20CTQ035S-M3 VS-20CTQ040S-M3 VS-20CTQ045S-M3
PARAMETER SYMBOL UNITS
VS-20CTQ035-1-M3 VS-20CTQ040-1-M3 VS-20CTQ045-1-M3
Maximum DC reverse voltage V
R
35 40 45 V
Maximum working peak reverse voltage V
RWM
Revision: 27-Oct-17 Document Number: 94932
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-20CTQ...S-M3, VS-20CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current
I 50 % duty cycle at T = 145 C, rectangular waveform 20
F(AV) C
See fig. 5
A
Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 1060
surge current per leg I condition and with rated
FSM
10 ms sine or 6 ms rect. pulse 265
See fig. 7 V applied
RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 2.0 A, L = 6.5 mH 13 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 2.0 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
10 A 0.64
T = 25 C
J
20 A 0.76
Maximum forward voltage drop per leg
(1)
V V
FM
See fig. 1
10 A 0.57
T = 125 C
J
20 A 0.68
T = 25 C 2
Maximum reverse leakage current per leg J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 15
J
Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF
T R DC
Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction and storage
T , T -55 to 175 C
J Stg
temperature range
Maximum thermal resistance, DC operation
3.25
junction to case per leg See fig. 4
R
thJC
Maximum thermal resistance,
DC operation 1.63 C/W
junction to case per package
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
20CTQ035S
2
Case style D PAK (TO-263AB) 20CTQ040S
20CTQ045S
20CTQ035-1
Case style TO-262AA 20CTQ040-1
20CTQ045-1
Revision: 27-Oct-17 Document Number: 94932
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000