VS-20CTQ150PbF, VS-20CTQ150-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 10 A FEATURES Base 2 common 175 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance 13Common TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition I 2 x 10 A (-N3 only) F(AV) V 150 V R DESCRIPTION V at I 0.66 V F F The center tap Schottky rectifier series has been optimized I max. 5 mA at 125 C RM for low reverse leakage at high temperature. The proprietary T 175 C J barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching Diode variation Common cathode power supplies, converters, freewheeling diodes, and E 2.45 mJ AS reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 20 A F(AV) V 150 V RRM I t = 5 s sine 1030 A FSM p V 10 A , T = 125 C (per leg) 0.66 V F pk J T Range - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-20CTQ150PbFVS-20CTQ150-N3UNITS Maximum DC reverse voltage V R 150 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 10 forward current I 50 % duty cycle at T = 154 C, rectangular waveform A F(AV) C per device 20 See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse 1030 Following any rated load non-repetitive surge current per leg I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse 180 V applied RRM See fig. 7 Non-repetitive avalanche energy per leg E T = 25 C, I = 0.7 A, L = 10 mH 2.45 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.7 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 26-Aug-11 Document Number: 94164 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20CTQ150PbF, VS-20CTQ150-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 10 A 0.80 0.88 T = 25 C J 20 A 0.90 1.0 Maximum forward voltage drop per leg (1) V V FM See fig. 1 10 A 0.63 0.66 T = 125 C J 20 A 0.73 0.77 T = 25 C 3.0 25 A Maximum reverse leakage current per leg J I V = Rated V RM R R See fig. 2 T = 125 C 2.7 5.0 mA J Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 280 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body -8.0 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, 2.0 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.0 C/W junction to case per package Typical thermal resistance, Mounting surface, smooth and greased R 0.50 thCS case to heatsink (Only for TO-220) 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-220AB 20CTQ150 Revision: 26-Aug-11 Document Number: 94164 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000