VS-21DQ04, VS-21DQ04-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 A FEATURES Low profile, axial leaded outline High frequency operation Cathode Anode Very low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical DO-204AL strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package DO-204AL (DO-41) Designed and qualified for commercial level I 2 A Halogen-free according to IEC 61249-2-21 definition F(AV) (-M3 only) V 40 V R V at I 0.5 V F F DESCRIPTION I max. 10 mA at 125 C RM The VS-21DQ04... axial leaded Schottky rectifier has been T max. 150 C J optimized for very low forward voltage drop, with moderate Diode variation Single die leakage. Typical applications are in switching power E 5.0 mJ supplies, converters, freewheeling diodes, and reverse AS battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 2A F(AV) V 40 RRM V V 2 Apk, T = 125 C 0.5 F J T Range - 40 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-21DQ04 VS-21DQ04-M3 UNITS Maximum DC reverse voltage V R 40 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 112 C, rectangular waveform 2 F(AV) C See fig. 4 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 420 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 70 RRM See fig. 6 Non-repetitive avalanche energy E T = 25 C, I = 1.0 A, L = 10 mH 5.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 21-Sep-11 Document Number: 93279 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-21DQ04, VS-21DQ04-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. 2 A 0.49 0.55 T = 25 C J 4 A 0.60 0.65 (1) Maximum forward voltage drop V V FM 2 A 0.42 0.5 T = 125 C J 4 A 0.56 0.62 T = 25 C 0.01 0.50 J (1) Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C 5.2 10 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 130 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 40 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 100 thJA junction to ambient Without cooling fin C/W Typical thermal resistance, DC operation R 25 thJL junction to lead See fig. 4 0.33 g Approximate weight 0.012 oz. Marking device Case style DO-204AL (D-41) 21DQ04 Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 21-Sep-11 Document Number: 93279 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000