VS-30CPQ0.0PbF, VS-30CPQ0.0-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common 150 C T operation J cathode 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long 13 TO-247AC term reliability Anode Anode 2 1 2 Common Compliant to RoHS Directive 2002/95/EC cathode Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition (-N3 only) PRODUCT SUMMARY Package TO-247AC DESCRIPTION I 2 x 15 A F(AV) The VS-30CPQ... center tap Schottky rectifier has been V 50 V, 60 V R optimized for very low forward voltage drop, with moderate V at I 0.56 V F F leakage. The proprietary barrier technology allows for I max. 45 mA at 125 C RM reliable operation up to 150 C junction temperature. Typical T max. 150 C applications are in switching power supplies, converters, J freewheeling diodes, and reverse battery protection. Diode variation Common cathode E 13 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 30 A F(AV) V 50/60 V RRM I t = 5 s sine 1020 A FSM p V 15 Apk, T = 125 C (per leg) 0.56 V F J T - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30CPQ050PbF VS-30CPQ050-N3 VS-30CPQ060PbF VS-30CPQ060-N3 UNITS Maximum DC reverse voltage V R 50 50 60 60 V Maximum working peak V RWM reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 112 C, rectangular waveform 30 F(AV) C See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 1020 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 265 See fig. 7 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.50 A, L = 11.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 01-Sep-11 Document Number: 94183 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30CPQ0.0PbF, VS-30CPQ0.0-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A 0.60 T = 25 C J 30 A 0.80 Maximum forward voltage drop per leg (1) V V FM See fig. 1 15 A 0.56 T = 125 C J 30 A 0.70 T = 25 C 0.80 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 45 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 720 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation 2.20 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 1.10 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.24 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 30CPQ050 Marking device Case style TO-247AC (JEDEC) 30CPQ060 Revision: 01-Sep-11 Document Number: 94183 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000