VS-30CPQ1.0PbF Series, VS-30CPQ1.0-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 2 Guard ring for enhanced ruggedness and 1 13 Available long term reliability Anode Anode TO-247AC 2 1 2 Designed and qualified according to JEDEC-JESD47 Common cathode Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION Package TO-247AC The VS-30CPQ... center tap Schottky rectifier series has I 2 x 15 A F(AV) been optimized for low reverse leakage at high temperature. V 140 V, 150 V The proprietary barrier technology allows for reliable R operation up to 175 C junction temperature. Typical V at I 0.78 V F F applications are in switching power supplies, converters, I max. 15 mA at 125 C RM freewheeling diodes, and reverse battery protection. T max. 175 C J Diode variation Common cathode E 11.25 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 30 A F(AV) V 150 V RRM I t = 5 s sine 1000 A FSM p V 15 A , T = 125 C (per leg) 0.78 V F pk J T - 55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-30CPQ140PbF VS-30CPQ140-N3 VS-30CPQ150PbF VS-30CPQ150-N3 UNITS Maximum DC reverse voltage V R 140 140 150 150 V Maximum working peak V RWM reverse voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per device 30 forward current I 50 % duty cycle at T = 135 C, rectangular waveform F(AV) C per leg 15 See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 1000 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 340 See fig. 7 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 0.50 A, L = 90 mH 11.25 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Jul-13 Document Number: 94186 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30CPQ1.0PbF Series, VS-30CPQ1.0-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 1.00 T = 25 C J 30 A 1.19 Maximum forward voltage drop per leg (1) V V FM See fig. 1 15 A 0.78 T = 125 C J 30 A 0.93 T = 25 C 0.1 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 340 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation 2.20 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 1.10 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.24 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 30CPQ140 Marking device Case style TO-247AC (JEDEC) 30CPQ150 Revision: 17-Jul-13 Document Number: 94186 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000