VS-245NQ015PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 240 A FEATURES Lug terminal 125 C T operation J anode Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base Designed and qualified for industrial level cathode HALF-PAK (D-67) UL approved file E222165 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS The VS-245NQ.. high current Schottky rectifier module I 240 A F(AV) series has been optimized for low reverse leakage at high V 15 V R temperature. The proprietary barrier technology allows for Package HALF-PAK (D-67) reliable operation up to 150 C junction temperature. Typical applications are in high current switching power supplies, Circuit configuration Single diode plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse batter y protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 240 A F(AV) V 15 V RRM I t = 5 s sine 20 000 A FSM p V 240 A , T = 75 C 0.37 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-245NQ015PbFUNITS Maximum DC reverse voltage V 15 R V Maximum working peak reverse voltage V 25 RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 73 C, rectangular waveform 240 F(AV) C See fig. 5 A 5 s sine or 3 s rect. pulse 20 000 Maximum peak one cycle Following any rated load non-repetitive surge current I condition and with rated FSM See fig. 7 10 ms sine or 6 ms rect. pulse V applied 3000 RRM Non-repetitive avalanche energy E T = 25 C, I = 5 A, L = 1 mH 12 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 01-Feb-2019 Document Number: 94464 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-245NQ015PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 240 A 0.52 T = 25 C J 480 A 0.61 Maximum forward voltage drop (1) V V FM See fig. 1 240 A 0.37 T = 125 C J 480 A 045 T = 25 C 80 J Maximum reverse leakage current I (1) V = Rated V mA RM R R See fig. 2 T = 125 C 4000 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 15 800 pF T R DC Typical series inductance L From top of terminal hole to mounting plane 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 500 s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 125 C J Stg temperature range Maximum thermal resistance, DC operation R 0.19 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.05 thCS case to heatsink 30 g Approximate weight 1.06 oz. minimum 3 (26.5) Mounting torque maximum 4 (35.4) N m Non-lubricated threads (lbf in) minimum 3.4 (30) Terminal torque maximum 5 (44.2) Case style HALF-PAK module 10 000 1000 100C 1000 Tj = 100C 75C 100 100 Tj = 75C 10 25C 10 Tj = 25C 1 1 0 3 6 9 12 15 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 01-Feb-2019 Document Number: 94464 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R