VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 10 A FEATURES Base 2 common 175 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance 13Common TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AB Halogen-free according to IEC 61249-2-21 definition I 2 x 10 A (-N3 only) F(AV) V 35 V, 40 V, 45 V R DESCRIPTION V at I 0.57 V F F The VS-20CTQ... center tap Schottky rectifier series I max. 15 mA at 125 C RM has been optimized for low reverse leakage at high T max. 175 C J temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical Diode variation Common cathode applications are in switching power supplies, converters, E 13 mJ AS freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 20 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 1060 A FSM p V 10 A , T = 125 C (per leg) 0.57 V F pk J T Range - 55 to 175 C J VOLTAGE RATINGS VS- VS- VS- VS- VS- VS- PARAMETER SYMBOL UNITS 20CTQ035PbF 20CTQ035-N3 20CTQ040PbF 20CTQ040-N3 20CTQ045PbF 20CTQ045-N3 Maximum DC V R reverse voltage 35 35 40 40 45 45 V Maximum working peak reverse V RWM voltage ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 145 C, rectangular waveform 20 F(AV) C See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse 1060 Following any rated load surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse V applied 265 RRM See fig. 7 Non-repetitive avalanche energy per leg E T = 25 C, I = 2.0 A, L = 6.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 25-Aug-11 Document Number: 94162 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20CTQ...PbF Series, VS-20CTQ...-N3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 10 A 0.64 T = 25 C J 20 A 0.76 Maximum forward voltage drop per leg (1) V V FM See fig. 1 10 A 0.57 T = 125 C J 20 A 0.68 T = 25 C 2 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation 3.25 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 1.63 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20CTQ035 Marking device Case style TO-220AB 20CTQ040 20CTQ045 Revision: 25-Aug-11 Document Number: 94162 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000