VS-183NQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 180 A FEATURES 175 C T operation Lug terminal J anode Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Base Designed and qualified for industrial level cathode UL approved file E222165 HALF-PAK (D-67) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS The VS-183NQ.. high current Schottky rectifier module I 180 A F(AV) series has been optimized for low reverse leakage at high V 100 V R temperature. The proprietary barrier technology allows for Package HALF-PAK (D-67) reliable operation up to 175 C junction temperature. Typical applications are in high current switching power supplies, Circuit configuration Single diode plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse batter y protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 180 A F(AV) V 100 V RRM I t = 5 s sine 22 000 A FSM p V 180 A , T = 125 C 0.73 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-183NQ100PbFUNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 128 C, rectangular waveform 240 F(AV) C See fig. 5 A 5 s sine or 3 s rect. pulse 22 000 Maximum peak one cycle Following any rated non-repetitive surge current I load condition and with FSM See fig. 7 10 ms sine or 6 ms rect. pulse rated V applied 2500 RRM Non-repetitive avalanche energy E T = 25 C, I = 5.5 A, L = 1 mH 15 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 01-Feb-2019 Document Number: 94461 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-183NQ100PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 180 A 0.91 T = 25 C J 360 A 1.23 Maximum forward voltage drop (1) V V FM See fig. 1 180 A 0.73 T = 125 C J 360 A 0.9 T = 25 C 4.5 J Maximum reverse leakage current I (1) V = Rated V mA RM R R See fig. 2 T = 125 C 60 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 4150 pF T R DC Typical series inductance L From top of terminal hole to mounting plane 6.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 500 s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation R 0.28 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.05 thCS case to heatsink 30 g Approximate weight 1.06 oz. minimum 3 (26.5) Mounting torque maximum 4 (35.4) N m Non-lubricated threads (lbf in) minimum 3.4 (30) Terminal torque maximum 5 (44.2) Case style HALF-PAK module 1000 1000 T = 175 C J 100 T = 175 C J 100 10 T = 125 C J 1 T = 125 C J 10 0.1 T = 25 C J 0.01 T = 25 C J 1 0.001 010.5.0 1.5 2.0 2.5 10 20 30 40 50 60 70 80 90 100 94461 01 V - Forward Voltage Drop (V) 94461 02 V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 01-Feb-2019 Document Number: 94461 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R