VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 18 A
FEATURES
Base
cathode 175 C T operation
J
2
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
2
encapsulation for enhanced mechanical strength
1
and moisture resistance
1 3
Guard ring for enhanced ruggedness and long
3 N/C Anode
term reliability
2
D PAK (TO-263AB)
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 C
PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47
I 18 A
Material categorization: for definitions of compliance
F(AV)
please see www.vishay.com/doc?99912
V 35 V, 40 V, 45 V
R
V at I 0.53 V
F F
DESCRIPTION
I 25 mA at 125 C
RM
The VS-18TQ... Schottky rectifier series has been optimized
T max. 175 C
J
for low reverse leakage at high temperature. The proprietary
E 24 mJ
AS
barrier technology allows for reliable operation up to 175 C
2
Package D PAK (TO-263AB)
junction temperature. Typical applications are in switching
Circuit configuration Single
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 18 A
F(AV)
V Range 35 to 45 V
RRM
I t = 5 s sine 1800 A
FSM p
V 18 A , T = 125 C 0.53 V
F pk J
T Range -55 to +175 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-18TQ035S-M3 VS-18TQ040S-M3 VS-18TQ045S-M3 UNITS
Maximum DC reverse voltage V
R
35 40 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current
I 50 % duty cycle at T = 149 C, rectangular waveform 18 A
F(AV) C
See fig. 5
5 s sine or 3 s rect. pulse Following any rated 1800
Maximum peak one cycle
load condition and
non-repetitive surge current I A
FSM
with rated V
10 ms sine or 6 ms rect. pulse RRM 390
See fig. 7
applied
Non-repetitive avalanche energy E T = 25 C, I = 3.6 A, L = 3.7 mH 24 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 3.6 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 27-Oct-17 Document Number: 94928
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-18TQ035S-M3, VS-18TQ040S-M3, VS-18TQ045S-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
18 A 0.60
T = 25 C
J
36 A 0.72
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
18 A 0.53
T = 125 C
J
36 A 0.67
T = 25 C 2.5
Maximum reverse leakage current J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 25
J
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1400 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
T , T -55 to 175 C
J Stg
storage temperature range
Maximum thermal resistance, DC operation
R 1.50
thJC
junction to case See fig. 4
C/W
Typical thermal resistance,
R Mounting surface, smooth, and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5) kgf cm
Mounting torque
maximum 12 (10) (lbf in)
18TQ035S
2
Marking device Case style D PAK (TO-263AB) 18TQ040S
18TQ045S
1000 1000
T = 175 C
J
100
T = 150 C
J
10
T = 125 C
J
1
T = 100 C
T = 175 C
J
J
T = 125 C
J
0.1
T = 25 C
T = 75 C
J
J
0.01
T = 50 C
J
0.001
T = 25 C
J
0.1 0.0001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 35 40 45
V - Forward Voltage Drop (V) V - Reverse Voltage (V)
FM R
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 27-Oct-17 Document Number: 94928
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
100
10
1
I - Instantaneous Forward
F
Current (A)
I - Reverse Current (mA)
R