VS-19TQ015S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 19 A FEATURES 125 C T operation (V < 5 V) Base J R cathode Optimized for OR-ing applications 2 Ultralow forward voltage drop High frequency operation 2 1 Guard ring for enhanced ruggedness and long term reliability 1 3 3 High purity, high temperature epoxy encapsulation for N/C Anode 2 D PAK (TO-263AB) enhanced mechanical strength and moisture resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 19 A F(AV) Material categorization: for definitions of compliance V 15 V R please see www.vishay.com/doc 99912 V at I 0.36 V F F DESCRIPTION I max. 522 mA at 100 C RM T max. 125 C J The VS-19TQ015S-M3 Schottky rectifier has been E 6.75 mJ optimized for ultralow forward voltage drop specifically for AS 2 the OR-ing of parallel power supplies. The proprietary Package D PAK (TO-263AB) barrier technology allows for reliable operation up to 125 C Circuit configuration Single junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 19 A F(AV) V 15 V RRM I t = 5 s sine 700 A FSM p V 19 A , T = 75 C 0.32 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-19TQ015S-M3 UNITS Maximum DC reverse voltage V R 15 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 80 C, rectangular waveform 19 A F(AV) C See fig. 5 5 s sine or 3 s rect. pulse 700 Maximum peak one cycle Following any rated non-repetitive surge current I load condition and with A FSM See fig. 7 10 ms sine or 6 ms rect. pulse rated V applied 330 RRM Non-repetitive avalanche energy E T = 25 C, I = 1.50 A, L = 6 mH 6.75 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.50 A AR Frequency limited by T maximum V = 3 x V typical J A R Revision: 27-Oct-17 Document Number: 95730 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-19TQ015S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 19 A 0.36 T = 25 C J 38 A 0.46 Maximum forward voltage drop (1) V V FM See fig. 1 19 A 0.32 T = 75 C J 38 A 0.43 T = 100 C, V = 12 V 465 J R T = 100 C, V = 5 V 285 J R Maximum reverse leakage current (1) I mA RM See fig. 2 T = 25 C 10.5 J V = Rated V R R T = 100 C 522 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 2000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -55 to +125 J C Maximum storage temperature range T -55 to +150 Stg Maximum thermal resistance, DC operation R 1.50 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 Marking device Case style D PAK (TO-263AB) 19TQ015S 1000 1000 T = 100 C J 100 T = 75 C J T = 100 C J 10 T = 75 C J T = 50 C J T = 25 C J T = 25 C J 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 05 10 15 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Oct-17 Document Number: 95730 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 100 10 1 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R