VS-1EFU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 1 A FRED Pt FEATURES Ultrafast recovery time, reduced Q , and soft rr recovery 175 C maximum operating junction temperature For PCF CRM, snubber operation Cathode Anode Low forward voltage drop Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C DO-219AB (SMF) AEC-Q101 qualified, meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY State of the art ultrafast recovery rectifiers designed with Package DO-219AB (SMF) optimized performance of forward voltage drop, ultrafast recovery time, and soft recovery. I 1 A F(AV) The planar structure and the platinum doped life time control V 600 V R guarantee the best overall performance, ruggedness, and V at I 0.83 V F F reliability characteristics. t 55 ns rr These devices are intended for use in PFC, boost, lighting, T max. 175 C J in the AC/DC section of SMPS, freewheeling and clamp Diode variation Single die diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM (1) Average rectified forward current I T = 158 C 1 F(AV) C A Non-repetitive peak surge current I T = 25 C, 6 ms square pulse 30 FSM J Operating junction and storage temperature range T , T -55 to +175 C J Stg Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , V I = 100 A 600 - - BR R R blocking voltage V I = 1 A - 1.0 1.2 F Forward voltage V F I = 1 A, T = 150 C - 0.83 1 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 100 J R R Junction capacitance C V = 600 V - 5 - pF T R Revision: 22-Jan-16 Document Number: 95863 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-1EFU06HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 42 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 55 F R rr Reverse recovery time t ns rr T = 25 C -32- J = 125 C - 47 - T J I = 1 A F T = 25 C - 4.8 - J Peak recovery current I dI /dt = 500 A/s A RRM F T = 125 C - 6.8 - J V = 400 V R T = 25 C - 77 - J Reverse recovery charge Q nC rr T = 125 C - 160 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Device mounted on PCB with 8 mm x 16 mm Thermal resistance, junction to case R -- 15 C/W thJC soldering lands Device mounted on PCB with 2 mm x 3.5 mm Thermal resistance, junction to ambient R - - 130 C/W thJA soldering lands 0.015 g Approximate weight 0.0005 oz. Marking device Case style DO-219AB (SMF) MNU 100 100 T = 175 C J 10 T = 150 C J T = 125 C 10 J T = 175 C J 1 0.1 1 T = 25 C J T = 150 C J 0.01 T = 125 C J T = 25 C J 0.1 0.001 0.2 0.7 1.2 1.7 2.2 2.7 3.2 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 22-Jan-16 Document Number: 95863 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R