333 3 VS-1ENH01-M3, VS-1ENH02-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 1 A FRED Pt FEATURES Very low profile - typical height of 1.0 mm eSMP Series Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C For PFC, CRM snubber operation Material categorization: for definitions of compliance SMP (DO-220AA) please see www.vishay.com/doc 99912 Cathode Anode TYPICAL APPLICATION For use in high frequency, freewheeling, DC/DC converters, LINKS TO ADDITIONAL RESOURCES PFC, and in snubber industrial and automotive applications. MECHANICAL DATA 3D Models Case: SMP (DO-220AA) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Terminals: matte tin plated leads, solderable per I 1 A F(AV) J-STD-002, meets JESD 201 class 2 whisker test V 100 V, 200 V R Polarity: color band denotes cathode end V at I 0.69 V F F I 40 A FSM t (typ.) 23 ns rr T max. 175 C J Package SMP (DO-220AA) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS VS-1ENH01-M3 100 Peak repetitive reverse V V RRM voltage VS-1ENH02-M3 200 Average rectified forward current I T = 168 C 1 F(AV) C A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse 40 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VS-1ENH01-M3 100 - - Breakdown voltage, V , BR I = 100 A R blocking voltage V VS-1ENH02-M3 R 200 - - V I = 1 A - 0.86 0.92 F Forward voltage V F I = 1 A, T = 150 C - 0.69 0.74 F J V = V rated - - 2 R R Reverse leakage current I A R T = 150 C, V = V rated - - 20 J R R Junction capacitance C V = 200 V - 8 - pF T R Revision: 28-Jan-2021 Document Number: 96578 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-1ENH01-M3, VS-1ENH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 23 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 28 F R rr Reverse recovery time t ns rr T = 25 C -14 - J T = 125 C - 22 - J I = 1 A F T = 25 C - 1.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 2.7 - J V = 100 V R T = 25 C - 10 - J Reverse recovery charge Q nC rr T = 125 C - 29 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1) Thermal resistance, junction mount R Infinite heatsink - 7 9 thJM C/W Thermal resistance, junction to ambient R PCB footprint 4.8 mm x 4.8 mm - 107 - thJA VS-1ENH01-M3 1H1 Marking device Case style SMP (DO-220AA) VS-1ENH02-M3 1H2 Note (1) Thermal resistance junction to mount follows JEDEC 51-14 transient dual interface test method (TDIM) 100 100 175 C 10 150 C T = 175 C J 10 1 125 C 0.1 1 T = 150 C 0.01 J 25 C T = 125 C J 0.001 T = 25 C J T = -40 C J 0.1 0.0001 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 75 100 125 150 175 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96578 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R