VS-2ENH02-M3/84A Vishay

333 3 VS-2ENH01-M3, VS-2ENH02-M3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt FEATURES Very low profile - typical height of 1.0 mm eSMP Series Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C For PFC, CRM snubber operation SMP (DO-220AA) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Cathode Anode TYPICAL APPLICATION LINKS TO ADDITIONAL RESOURCES For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial and automotive applications. 3D Models MECHANICAL DATA Case: SMP (DO-220AA) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 A F(AV) Terminals: matte tin plated leads, solderable per V 100 V, 200 V J-STD-002, meets JESD 201 class 2 whisker test R V at I 0.79 V F F Polarity: color band denotes cathode end I 40 A FSM t (typ.) 23 ns rr T max. 175 C J Package SMP (DO-220AA) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS VS-2ENH01-M3 100 Peak repetitive reverse V V RRM voltage VS-2ENH02-M3 200 Average rectified forward current I T = 158 C 2 F(AV) C A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse 40 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VS-2ENH01-M3 100 - - Breakdown voltage, V , BR I = 100 A R blocking voltage V VS-2ENH02-M3 R 200 - - V I = 2 A - 0.94 1.00 F Forward voltage V F I = 2 A, T = 150 C - 0.79 0.84 F J V = V rated - - 2 R R Reverse leakage current I A R T = 150 C, V = V rated - - 20 J R R Junction capacitance C V = 200 V - 8 - pF T R Revision: 28-Jan-2021 Document Number: 96577 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-2ENH01-M3, VS-2ENH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 23 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 28 F R rr Reverse recovery time t ns rr T = 25 C -16- J T = 125 C - 25 - J I = 2 A F T = 25 C - 2.0 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.1 - J V = 100 V R T = 25 C - 15 - J Reverse recovery charge Q nC rr T = 125 C - 37 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, (1) R Infinite heatsink - 7 9 thJM junction to mount C/W Thermal resistance, R PCB footprint 4.8 mm x 4.8 mm - 107 - thJA junction to ambient VS-2ENH01-M3 2H1 Marking device Case style SMP (DO-220AA) VS-2ENH02-M3 2H2 Note (1) Thermal resistance junction to mount follows JEDEC 51-14 transient dual interface test method (TDIM) 100 100 175 C 10 150 C T = 175 C J 1 10 125 C 0.1 1 0.01 T = 150 C J 25 C T = 125 C J 0.001 T = 25 C J T = -40 C J 0.0001 0.1 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 75 100 125 150 175 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 96577 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R