SD103AWS-G, SD103BWS-G, SD103CWS-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications DESIGN SUPPORT TOOLS click logo to get started Other applications are click suppression, efficient full wave bridges in telephone subsets, Models and blocking diodes in rechargeable low voltage Available battery systems MECHANICAL DATA For general purpose applications Case: SOD-323 AEC-Q101 qualified available Weight: approx. 4.0 mg Base P/N-G3 - green, commercial grade Packaging codes/options: Base P/N-HG3 - green, AEC-Q101 qualified 18/10K per 13 reel (8 mm tape), 10K/box Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS SD103AWS-G3-08 or SD103AWS-G3-18 SD103AWS-G Single Z6 SD103AWS-HG3-08 or SD103AWS-HG3-18 SD103BWS-G3-08 or SD103BWS-G3-18 SD103BWS-G Single Z7 Tape and reel SD103BWS-HG3-08 or SD103BWS-HG3-18 SD103CWS-G3-08 or SD103CWS-G3-18 SD103CWS-G Single Z8 SD101CWS-HG3-08 or SD101CWS-HG3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD103AWS-G V 40 V RRM Repetitive peak reverse voltage SD103BWS-G V 30 V RRM SD103CWS-G V 20 V RRM (1) Forward continuous current I 350 mA F Single cycle surge 10 s square wave I 2A FSM (1) Power dissipation P 200 mW tot Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 500 K/W thJA Junction temperature T 125 C j Operating temperature range T -55 to +125 C op Storage temperature range T -55 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.6, 01-Jun-17 Document Number: 81142 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SD103AWS-G, SD103BWS-G, SD103CWS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT V = 30 V SD103AWS-G I 5A R R Leakage current V = 20 V SD103BWS-G I 5A R R V = 10 V SD103CWS-G I 5A R R I = 20 mA V 370 mV F F Forward voltage drop I = 200 mA V 600 mV F F Diode capacitance V = 0 V, f = 1 MHz C 50 pF R D I = I = 50 mA to 200 mA, F R Reverse recovery time t 10 ns rr recover to 0.1 I R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 T = 125 C amb 100 100 C 100 75 C 10 10 50 C 1 1 25 C 0.1 0.1 0.01 0.01 0 5 10 15 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1.0 20084 V - Reverse Voltage (V) 18488 V - Forward Voltage (V) R F Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 100 5 t = 300 ms p 4 duty cycle = 2 % 3 10 2 1 0 1 010.5 1.0.5 0510 20 30 40 0 18489 18491 V - Forward Voltage (V) V - Reverse Voltag e (V) F R Fig. 2 - Typical High Current Forward Conduction Curve Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.6, 01-Jun-17 Document Number: 81142 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Forward Current (A) F F C- Diode Capacitance (pF) I - Reverse Current (A) D R