SD103BWS-E3-08 Vishay

SD103AWS, SD103BWS, SD103CWS www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level DESIGN SUPPORT TOOLS click logo to get started applications For general purpose applications Models AEC-Q101 qualified available Available Base P/N-E3 - RoHS-compliant, commercial grade MECHANICAL DATA Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Case: SOD-323 Material categorization: for definitions of compliance Weight: approx. 4.3 mg please see www.vishay.com/doc 99912 Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS CONFIGURATION SD103AWS-E3-08 or SD103AWS-E3-18 SD103AWS Single S6 SD103AWS-HE3-08 or SD103AWS-HE3-18 SD103BWS-E3-08 or SD103BWS-E3-18 SD103BWS Single S7 Tape and reel SD103BWS-HE3-08 or SD103BWS-HE3-18 SD103CWS-E3-08 or SD103CWS-E3-18 SD103CWS Single S8 SD103CWS-HE3-08 or SD103CWS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD103AWS V 40 V RRM Repetitive peak reverse voltage SD103BWS V 30 V RRM SD103CWS V 20 V RRM (1) Forward continuous current I 350 mA F (1) Power dissipation P 200 mW tot Single cycle surge 10 s square wave I 2A FS M Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 500 K/W thJA Junction temperature T 125 C j Operating temperature range T -55 to +125 C op Storage temperature range T -55 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 2.2, 01-Jun-17 Document Number: 85682 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SD103AWS, SD103BWS, SD103CWS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT V = 30 V SD103AWS I 5A R R Leakage current V = 20 V SD103BWS I 5A R R V = 10 V SD103CWS I 5A R R I = 20 mA V 370 mV F F Forward voltage drop I = 200 mA V 600 mV F F Diode capacitance V = 0 V, f = 1 MHz C 50 pF R D I = I = 50 mA to 200 mA, F R Reverse recovery time t 10 ns rr recover to 0.1 I R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 T = 125 C amb 100 100 100 C 75 C 10 10 50 C 1 1 25 C 0.1 0.1 0.01 0.01 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 40 45 50 20084 18488 V - Forward Voltage (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 5 100 t = 300 ms p 4 duty cycle = 2 % 3 10 2 1 0 1 0510 20 30 40 0 010.5 1.0.5 18489 18491 V - Forward Voltage (V) V - Reverse Voltag e (V) F R Fig. 2 - Typical High Current Forward Conduction Curve Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 2.2, 01-Jun-17 Document Number: 85682 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Forward Current (A) F F C- Diode Capacitance (pF) I - Reverse Current (A) D R