SD41 thru SD4145R
V = 35 V - 45 V
RRM
Silicon Power
I = 30 A
F
Schottky Diode
Features
High Surge Capability DO-4 Package
Types up to 45 V V
RRM
Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions SD41 (R) SD4145 (R) Unit
Repetitive peak reverse voltage V 35 45 V
RRM
V 25 32
RMS reverse voltage V
RMS
DDCC blockingblocking vvoltageoltage VV 3535 4545 VV
DCDC
I T 100 C
Continuous forward current 30 30 A
F C
Surge non-repetitive forward
I T = 25 C, t = 8.3 ms
600 600 A
F,SM C p
current, Half Sine Wave
Operating temperature T -55 to 150 -55 to 150 C
j
T -55 to 150 -55 to 150
Storage temperature C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Conditions SD41 (R) SD4145 (R)
Parameter Symbol Unit
V I = 30 A, T = 25 C 0.68 0.68 V
Diode forward voltage F F j
V = 35 V, T = 25 C 1.5 1.5
R j
I
Reverse current mA
R
V = 35 V, T = 125 C 25 25
R j
Thermal characteristics
Thermal resistance, junction -
R 1.5 1.5
C/W
thJC
case
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/SD41 thru SD4145R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/