SD103AW, SD103BW, SD103CW www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems click logo to get started DESIGN SUPPORT TOOLS The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring Models Available For general purpose applications AEC-Q101 qualified available MECHANICAL DATA Base P/N-E3 - RoHS-compliant, commercial grade Case: SOD-123 Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Weight: approx. 10.3 mg Material categorization: for definitions of compliance Cathode band color: black please see www.vishay.com/doc 99912 Packaging codes/options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE PART ORDERING CODE CIRCUIT CONFIGURATION REMARKS MARKING SD103AW-E3-08 or SD103AW-E3-18 SD103AW Single S6 SD103AW-HE3-08 or SD103AW-HE3-18 SD103BW-E3-08 or SD103BW-E3-18 SD103BW Single S7 Tape and reel SD103BW-HE3-08 or SD103BW-HE3-18 SD103CW-E3-08 or SD103CW-E3-18 SD103CW Single S8 SD103CW-HE3-08 or SD103CW-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD103AW V 40 V RRM Repetitive peak reverse voltage SD103BW V 30 V RRM SD103CW V 20 V RRM (1) Forward continuous current I 350 mA F (1) Power dissipation (infinite heat sink) P 400 mW tot Single cycle surge 10 s square wave I 2A FSM Note (1) Valid provided that electrodes are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 125 C j Operating temperature range T -55 to +125 C op Storage temperature range T -55 to +150 C stg Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.7, 23-Feb-18 Document Number: 85681 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SD103AW, SD103BW, SD103CW www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT V = 30 V SD103AW I 5A R R Leakage current V = 20 V SD103BW I 5A R R V = 10 V SD103CW I 5A R R I = 20 mA V 370 mV F F Forward voltage drop I = 200 mA V 600 mV F F Diode capacitance V = 0 V, f = 1 MHz C 50 pF R D I = I = 50 mA to 200 mA, F R Reverse recovery time t 10 ns rr recover to 0.1 I R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 T = 125 C amb 100 100 C 100 75 C 10 10 50 C 1 1 25 C 0.1 0.1 0.01 0.01 0 5 10 15 20 25 30 35 40 45 50 0 0.2 0.4 0.6 0.8 1.0 20084 V - Reverse Voltage (V) 18488 V - Forward Voltage (V) R F Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage Fig. 3 - Typical Variation of Reverse Current at Various Temperatures 100 5 t = 300 ms p 4 duty cycle = 2 % 3 10 2 1 0 1 010.5 1.0.5 0510 20 30 40 0 18489 18491 V - Forward Voltage (V) V - Reverse Voltag e (V) F R Fig. 2 - Typical High Current Forward Conduction Curve Fig. 4 - Typical Capacitance vs. Reverse Voltage Rev. 1.7, 23-Feb-18 Document Number: 85681 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) I - Forward Current (A) F F C- Diode Capacitance (pF) I - Reverse Current (A) D R