SD51R GeneSiC Semiconductor

SD51 thru SD51R V = 45 V RRM Silicon Power I = 60 A F Schottky Diode Features High Surge Capability DO-5 Package Types up to 45 V V RRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed) j Parameter Symbol Conditions SD51 (R) Unit Repetitive peak reverse voltage V 45 V RRM V 32 RMS reverse voltage V RMS DDCC blockingblocking vvoltageoltage VV 4545 VV DCDC I T 100 C Continuous forward current 60 A F C Surge non-repetitive forward I T = 25 C, t = 8.3 ms 800 A F,SM C p current, Half Sine Wave Operating temperature T -55 to 150 C j T -55 to 150 Storage temperature C stg Electrical characteristics, at Tj = 25 C, unless otherwise specified Conditions SD51 (R) Parameter Symbol Unit V I = 60 A, T = 25 C 0.66 V Diode forward voltage F F j V = 45 V, T = 25 C 5 R j I Reverse current mA R V = 45 V, T = 125 C 200 R j Thermal characteristics Thermal resistance, junction - R 1.0 C/W thJC case 1 www.genesicsemi.com/silicon-products/schottky-rectifiers/SD51 thru SD51R 2 www.genesicsemi.com/silicon-products/schottky-rectifiers/