SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes FEATURES The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems These diodes are also available in the SOD-123 and SOD-323 case with type designations SD103AW(S) to SD103CW(S), and in the MiniMELF case with type designations LL103A thru LL103C DESIGN SUPPORT TOOLS click logo to get started For general purpose applications Models AEC-Q101 qualified Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: DO-35 (DO-204AH) APPLICATIONS Weight: approx. 125 mg HF-detector Cathode band color: black Protection circuit Packaging codes/options: Small battery charger TR/10K per 13 reel (52 mm tape), 50K/box AC/DC, DC/DC converters TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION SD103A V = 40 V SD103A-TR or SD103A-TAP SD103A Single Tape and reel/ammopack R SD103B V = 30 V SD103B-TR or SD103B-TAP SD103B Single Tape and reel/ammopack R SD103C V = 20 V SD103C-TR or SD103C-TAP SD103C Single Tape and reel/ammopack R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT SD103A V 40 V R Peak inverse voltage SD103B V 30 V R SD103C V 20 V R (1) Power dissipation (infinite heat sink) P 400 mW tot Peak forward surge current t = 300 s square pulse I 15 A p FSM Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 310 K/W thJA Junction temperature T 125 C j Storage temperature range T -55 to +150 C stg Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Rev. 1.9, 01-Jun-17 Document Number: 85754 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SD103A, SD103B, SD103C www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT SD103A V 40 V (BR) Reverse breakdown voltage I = 50 A SD103B V 30 V R (BR) SD103C V 20 V (BR) V = 30 V SD103A I 5A R R Leakage current V = 20 V SD103B I 5A R R V = 10 V SD103C I 5A R R I = 20 mA V 370 mV F F Forward voltage drop I = 200 mA V 600 mV F F Diode capacitance V = 0 V, f = 1 MHz C 50 pF R D I = I = 50 mA to 200 mA, F R Reverse recovery time t 10 ns rr recover to 0.1 I R TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10 000 100 1000 10 1 100 0.1 10 0.01 0.001 1 0 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 120 140 160 16767 16765 V - Forward Voltage (mV) T - Junction Temperature (C) j F Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Reverse Current vs. Junction Temperature 5 30 f = 1 MHz 25 4 20 3 15 2 10 1 5 0 0 0.0 0.5 1.0 1.5 2.0 0 5 1015202530 16766 16768 V - Reverse Voltage (V) V - Forward Voltage (V) F R Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.9, 01-Jun-17 Document Number: 85754 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F I - Forward Current (A) F I - Reverse Current (A) R C - Diode Capacitance (pF) D