VS-12CWQ10FNHM3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 6 A
FEATURES
Base
common
Low forward voltage drop
cathode
4
Guard ring for enhanced ruggedness and
long term reliability
Popular D-PAK outline
Center tap configuration
2
Small foot print, surface mountable
Common
cathode
D-PAK (TO-252AA)
High frequency operation
13
Anode Anode
AEC-Q101 qualified
Meets JESD 201 class 2 whisker test
PRODUCT SUMMARY Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 C
Package D-PAK (TO-252AA)
Material categorization: For definitions of compliance
I 2 x 6 A
F(AV)
please see www.vishay.com/doc?99912
V 100 V
R
V at I 0.65 V
F F
DESCRIPTION
I 4 mA at 125 C
RM
The VS-12CWQ10FNHM3 surface mount, center tap,
Schottky rectifier series has been designed for applications
T max. 150 C
J
requiring low forward drop and small foot prints on PC
Diode variation Common cathode
board. Typical applications are in disk drives, switching
E 6 mJ
AS power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 12 A
F(AV)
V 100 V
RRM
I t = 5 s sine 330 A
FSM p
V 6 A , T = 125 C (per leg) 0.65 V
F pk J
T Range - 55 to 150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-12CWQ10FNHM3 UNITS
Maximum DC reverse voltage V
R
100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average
per leg 6
forward current I 50 % duty cycle at T = 135 C, rectangular waveform A
F(AV) C
per device 12
See fig. 5
Maximum peak one cycle Following any rated
5 s sine or 3 s rect. pulse 330
non-repetitive surge current per leg I load condition and with A
FSM
10 ms sine or 6 ms rect. pulse 110
See fig. 7 rated V applied
RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 12 mH 6 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 1A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 21-Aug-13 Document Number: 94734
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-12CWQ10FNHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
6 A 0.80
T = 25 C
J
Maximum forward
12 A 0.95
(1)
voltage drop per leg V V
FM
6 A 0.65
See fig. 1
T = 125 C
J
12 A 0.78
Maximum reverse
T = 25 C 1
J
(1)
leakage current per leg I V = Rated V mA
RM R R
T = 125 C 4
See fig. 2 J
Threshold voltage V 0.47 V
F(TO)
T = T maximum
J J
Forward slope resistance r 20.68 m
t
Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 183 pF
T R DC
Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH
S
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
(1)
T , T - 55 to 150 C
J Stg
temperature range
per leg 3.0
Maximum thermal resistance, DC operation
R C/W
thJC
junction to case See fig. 4
per device 1.5
0.3 g
Approximate weight
0.01 oz.
Marking device Case style D-PAK 12CWQ10FNH
Note
dP
tot 1
(1)
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT R
J thJA
Revision: 21-Aug-13 Document Number: 94734
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000