VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 15 A
FEATURES
Base
150 C T operation
cathode
J
2
Very low forward voltage drop
High frequency operation
High purity, high temperature epoxy
2
encapsulation for enhanced mechanical
3
strength and moisture resistance
3
1
1
N/C Anode
Guard ring for enhanced ruggedness and lon g
2
D PAK (TO-263AB)
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak
PRIMARY CHARACTERISTICS
of 260 C
I 15 A
F(AV) AEC-Q101 qualified, meets JESD 201, class 1 whisker
test
V 35 V, 40 V, 45 V
R
Material categorization: for definitions of compliance
V at I 0.50 V
F F
please see www.vishay.com/doc?99912
I max. 70 mA at 125 C
RM
T max. 150 C
J
DESCRIPTION
E 16 mJ
AS
The VS-12TQ...SHM3 Schottky rectifier series has been
2
Package D PAK (TO-263AB) optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
Circuit configuration Single
reliable operation up to 150 C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 15 A
F(AV)
V Range 35 to 45 V
RRM
I t = 5 s sine 990 A
FSM p
V 15 A , T = 125 C 0.50 V
F pk J
T Range -55 to +150 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-12TQ035SHM3 VS-12TQ040SHM3 VS-12TQ045SHM3 UNITS
Maximum DC reverse voltage V
R
35 40 45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current
I 50 % duty cycle at T = 120 C, rectangular waveform 15 A
F(AV) C
See fig. 5
5 s sine or 3 s rect. pulse 990
Maximum peak one cycle Following any rated
non-repetitive surge current I load condition and with A
FSM
See fig. 7 10 ms sine or 6 ms rect. pulse rated V applied 250
RRM
Non-repetitive avalanche energy E T = 25 C, I = 2.4 A, L = 5.5 mH 16 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 2.4 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 18-Jan-2019 Document Number: 95853
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS
15 A 0.56
T = 25 C
J
30 A 0.71
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
15 A 0.50
T = 125 C
J
30 A 0.64
T = 25 C 1.75
J
Maximum reverse leakage current
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 70
J
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
T , T -55 to +150 C
J Stg
temperature range
Maximum thermal resistance, DC operation
R 2.0
thJC
junction to case See fig. 4
C/W
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
12TQ030SH
2
Marking device Case style D PAK 12TQ040SH
12TQ045SH
Revision: 18-Jan-2019 Document Number: 95853
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000