VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base 150 C T operation cathode J 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy 2 encapsulation for enhanced mechanical 3 strength and moisture resistance 3 1 1 N/C Anode Guard ring for enhanced ruggedness and lon g 2 D PAK (TO-263AB) term reliability Meets MSL level 1, per J-STD-020, LF maximum peak PRIMARY CHARACTERISTICS of 260 C I 15 A F(AV) AEC-Q101 qualified, meets JESD 201, class 1 whisker test V 35 V, 40 V, 45 V R Material categorization: for definitions of compliance V at I 0.50 V F F please see www.vishay.com/doc 99912 I max. 70 mA at 125 C RM T max. 150 C J DESCRIPTION E 16 mJ AS The VS-12TQ...SHM3 Schottky rectifier series has been 2 Package D PAK (TO-263AB) optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for Circuit configuration Single reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 15 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 990 A FSM p V 15 A , T = 125 C 0.50 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-12TQ035SHM3 VS-12TQ040SHM3 VS-12TQ045SHM3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 120 C, rectangular waveform 15 A F(AV) C See fig. 5 5 s sine or 3 s rect. pulse 990 Maximum peak one cycle Following any rated non-repetitive surge current I load condition and with A FSM See fig. 7 10 ms sine or 6 ms rect. pulse rated V applied 250 RRM Non-repetitive avalanche energy E T = 25 C, I = 2.4 A, L = 5.5 mH 16 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2.4 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 18-Jan-2019 Document Number: 95853 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS 15 A 0.56 T = 25 C J 30 A 0.71 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.50 T = 125 C J 30 A 0.64 T = 25 C 1.75 J Maximum reverse leakage current (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 70 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 12TQ030SH 2 Marking device Case style D PAK 12TQ040SH 12TQ045SH Revision: 18-Jan-2019 Document Number: 95853 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000