RB095BM-30TL ROHM

Schottky Barrier Diode RB095BM-30 Data Sheet lApplication lDimensions (Unit : mm) lLand size figure (Unit : mm) General Rectification 6.0 lFeatures 1.6 1.6 1) Power mold type (TO-252) 1 2) Cathode common dual type 2.3 2.3 TO-252 3) High reliability (2) Cathode Low V 4) F lStructure ROHM : TO-252 JEITA : SC-63 1 : Manufacture Date lConstruction (1) (3) Anode Anode Silicon epitaxial planar type lTaping specifications (Unit : mm) lAbsolute maximum ratings (T = 25C) c Parameter Symbol Limits Unit Conditions Repetitive Peak Reverse Voltage V 35 V Duty0.5 RM V 30 V Direct Reverse Voltage Reverse Voltage R 60Hz half sin Wave resistive load, I 6 A Average forward rectified current o T =134C max., 1/2 Io per diode c 60Hz half sin wave, Non-repetitive Forward Current Surge Peak I 50 A FSM Non-repetitive at T =25C, per diode a Operating Junction Temperature T 150 C - j T C - Storage Temperature -40 to +150 stg lElectrical characteristics (T = 25C) j Parameter Symbol Min. Typ. Max. Unit Conditions V 0.425 I =3.0A Forward voltage - - V F F V =30V I - - 0.2 Reverse current mA R R R Thermal Resistance - - 6.0 C / W Junction to Case th(j-c) www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 1/5 6.0 3.0 2.0 Data Sheet RB095BM-30 lElectrical characteristic curves 10 100000 Tj = 75 C Tj = 125 C 10000 Tj = 125 C Tj = 150 C Tj = 150 C 1000 1 Tj = 75 C 100 10 Tj = 25 C Tj = 25 C 0.1 1 Tj = -25 C Tj = -25 C 0.1 0.01 0.01 0 100 200 300 400 500 600 0 10 20 30 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 10000 480 f = 1MHz Tj=25 C 470 I =3A F 460 n=30pcs 450 440 1000 430 420 410 AVE : 393.5mV 400 390 100 380 0 5 10 15 20 25 30 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -C CHARACTERISTICS R t www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t REVERSE CURRENT : I ( mA) R FORWARD VOLTAGE : V (mV) F