BAT42, BAT43 www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES For general purpose applications These diodes feature very low turn-on voltage and fast guard ring against excessive voltage, such as electrostatic discharges These diodes are also available in the SOD-123 case with the type designations BAT42W-V to BAT43W-V and in MiniMELF SOD-80 case with the type designations LL42 to LL43 AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammo tape (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAT42 BAT42-TR or BAT42-TAP Single BAT42 Tape and reel/ammopack BAT43 BAT43-TR or BAT43-TAP Single BAT43 Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 30 V RRM (1) Forward continuous current I 200 mA F (1) Repetitive peak forward current t < 1 s, < 0.5 I 500 mA p FRM (1) Surge forward current t < 10 ms I 4A p FSM (1) Power dissipation T = 65 C P 200 mW amb tot Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 300 K/W thJA Junction temperature T 125 C j Ambient operating temperature range T -65 to +125 C amb Storage temperature range T -65 to +150 C stg Note (1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Rev. 1.8, 01-Jun-17 Document Number: 85660 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAT42, BAT43 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Reverse breakdown voltage I = 100 A (pulsed) V 30 V R (BR) V = 25 V I 0.5 A R R (1) Leakage current V = 25 V, T = 100 C I 100 A R j R I = 200 mA V 1000 mV F F I = 10 mA BAT42 V 400 mV F F (1) Forward voltage I = 50 mA BAT42 V 650 mV F F I = 2 mA BAT43 V 260 330 mV F F I = 15 mA BAT43 V 450 mV F F Diode capacitance V = 1 V, f = 1 MHz C 7pF R D I = 10 mA, I = 10 mA, F R Reserve recovery time t 5ns rr i = 1 mA, R = 100 R L R = 15 k, C = 300 pF, L L Rectification efficieny 80 % v f = 45 MHz, V = 2 V RF Note (1) Pulse test t < 300 s, t /T < 0.02 p p TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 250 1000 125 C 200 100 100 C 75 C 150 10 50 C 1 100 25 C 0.1 50 0.01 0 0 1020 3040 50 0 50 100 150 200 18444 V - Reverse Voltage (V) R 18442 T - Ambient Temperature (C) amb Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature Fig. 3 - Typical Reverse Characteristics 1000 14 100 12 10 - 40 C 125 C 10 8 25 C 6 1 4 0.1 2 0 015105202530 0.01 0 200 400 600 800 1000 1200 18445 V - Reverse Voltage (V) R 18443 V - Instantaneous Forward Voltage (mV) F Fig. 2 - Typical Forward Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage Rev. 1.8, 01-Jun-17 Document Number: 85660 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I- Forward Current (mA) F P - Power Dissipation (mW) tot C - Diode Capacitance (pF) I - Reverse Leackage Current (A) D R