VS-12TTS08SLHM3 www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 8 A FEATURES Anode 4 Meets MSL level 1, per J-STD-020, 2, 4 LF maximum peak of 260 C AEC-Q101 qualified Meets JESD 201 class 1A whisker test 2 Flexible solution for reliable AC power 3 rectification 1 3 1 2 Cathode Gate D PAK (TO-263AB) Easy control peak current at charger power up to reduce passive / electromechanical components Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS APPLICATIONS I 8 A T(AV) On-board and off-board EV / HEV battery chargers V /V 800 V DRM RRM V 1.2 V Renewable energy inverters TM I 15 mA GT DESCRIPTION T -40 to +125 C J 2 The VS-12TTS08SLHM3 high voltage series of silicon Package D PAK (TO-263AB) controlled rectifiers are specifically designed for medium Circuit configuration Single SCR power switching and phase control applications. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C, A J 13.5 17 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 8 T(AV) A I 12.5 T(RMS) V /V 800 V RRM DRM I 110 A TSM V 8 A, T = 25 C 1.2 V T J dV/dt 150 V/s dI/dt 100 A/s T Range -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I / I RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-12TTS08SLHM3 800 800 5.0 Revision: 22-Feb-18 Document Number: 96121 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-12TTS08SLHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I 8 T(AV) T = 108 C, 180 conduction, half sine wave C Maximum RMS on-state current I 12.5 T(RMS) A 10 ms sine pulse, rated V applied, T = 125 C 95 Maximum peak one-cycle RRM J I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied, T = 125 C 110 J 10 ms sine pulse, rated V applied, T = 125 C 45 RRM J 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied, T = 125 C 64 J 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C 640 A s J Maximum on-state voltage drop V 8 A, T = 25 C 1.2 V TM J On-state slope resistance r 16.2 m t T = 125 C J Threshold voltage V 0.87 V T(TO) T = 25 C 0.05 J Maximum reverse and direct leakage current I /I V = rated V / V RM DM R RRM DRM T = 125 C 5.0 J Anode supply = 6 V, resistive load, initial I = 1 A, mA T Typical holding current I 30 H T = 25 C J Typical latching current I Anode supply = 6 V, resistive load, T = 25 C 50 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = open 150 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 100 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current +I 1.5 A GM Maximum peak negative gate voltage -V 10 V GM Anode supply = 6 V, resistive load, T = - 65 C 20 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 15 mA GT J Anode supply = 6 V, resistive load, T = 125 C 10 J Anode supply = 6 V, resistive load, T = -65 C 1.2 J Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 1 GT J V Anode supply = 6 V, resistive load, T = 125 C 0.7 J Maximum DC gate voltage not to trigger V 0.2 GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 0.1 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.8 gt J Typical reverse recovery time t 3 s rr T = 125 C J Typical turn-off time t 100 q Revision: 22-Feb-18 Document Number: 96121 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000