MCR100-3 - MCR100-8 Taiwan Semiconductor Small Signal Product CREAT BY ART Thyristors FEATURES - Epitaxial planar die construction - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Packing code with suffix means Green compound (Halogen free) TO-92 MECHANICAL DATA - Case : TO-92 plastic package - Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Weight : 0.19 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Forward Current RMS (All Conduction Angles I 0.8 A T(RMS) MCR100-3 100 Peak Repetitive Forward and Reverse MCR100-4 200 Blocking VoltageT =25C to 125C MCR100-5 V 300 J DRM V V R =1K MCR100-6 400 RRM GK MCR100-7 500 MCR100-8 600 Peak Forward Surge CurrentT =25C A I 10 A TSM (1/2 CycleSine Wave60Hz 2 2 0.415 Circuit Fusing Considerations t= 8.3 ms ItA s Forward Peak Gate Power T =25C PW 1 s P 0.1 W A GM P 0.01 Forward Average Gate Power T =25C) W GF(AV) A Forward Peak Gate CurrentT =25C PW 1 s I 1 A A GFM Reverse Peak Gate CurrentT =25CPW 1 s V 5 V GRM A T -40 ~ +125 Operating junction temperature range C J Storage temperature range T -40 ~ +150 C STG Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER SYMBOL MIN MAX UNIT Peak Forward or Reverse Blocking Current I DRM -10 A I at V = Rated V or V RRM AK DRM RRM Peak Forward On-State Voltage V -1.7 V TM o at I =1A Peak, T =25 C TM A Gate Trigger Current (Continous dc) I - 200 A GT at Anode Voltage = 7 Vdc., R =100 L Gate Trigger Current (Continous dc) at Anode Voltage = 7 Vdc., R =100 V -0.8 V L GT at Anode Voltage = Rated V , R =100) DRM L Holding Current at Anode Voltage =7 Vdc, Initiating Current=20mA I -5 mA H Document Number: DS S1412032 Version: D15 Not RecommendedMCR100-3 - MCR100-8 Taiwan Semiconductor Small Signal Product CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A 100 1 90 0. 9 80 0. 8 70 0. 7 60 0. 6 50 0. 5 40 30 0. 4 20 0. 3 10 0. 2 -40 -25 -10 5 20 35 50 65 80 95 110 -40 -25 -10 5 20 35 50 65 80 95 110 O T , Junction Temperature ( C) J O T . Junction Temperature ( C) J Fig. 2 Typical Gate Trigger Voltage Fig. 1 Typical Gate Trigger Curent VS. VS. Junction Temperature Junction Temperature 1000 1000 100 100 10 10 -40 -25 -10 5 20 35 50 65 80 95 110 -40 -25 -10 5 20 35 50 65 80 95 110 O T , Junction Temperature ( C) J O T , Junction Temperature ( C) J Fig. 4 Typical Lacthing Curent VS. Fig. 3 Typical Holding Curent VS. Junction Temperature Junction Temperature Fig. 5 Typical RMS Current Derating Fig. 6 Typical On-State Characteristics 120 10 o Maximum T =25 C 110 J DC 100 o Maximum T =110 C J 90 80 1 O 180 C 70 60 O O O O 30 C 60 C 90 C 120 C 50 40 0. 1 0 0.1 0.2 0.3 0.4 0.5 0. 5 0. 8 1. 1 1. 4 1. 7 2 2. 3 2. 6 2. 9 3. 2 3. 5 I RMS On-State Current (AMPS) T(RMS), V ,Instantaneous On-State Voltage (volts) T Document Number: DS S1412032 Version: D15 Not Recommended O Holding Current(A) Gate Trigger Current (A) T , Maximum Allowable Case Temperature( C) C I ,Instantaneous On-State Current (A) T Gate Trigger Voltage(Volts) Latching Current(A)