MMBD4148/CA/CC/SE Taiwan Semiconductor 200mA, SMD Switching Diode FEATURES KEY PARAMETERS Designed for mounting on small surface PARAMETER VALUE UNIT Low Capacitance I 200 mA F Low forward voltage drop V 100 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 2 A RoHS Compliant FSM Halogen-free according to IEC 61249-2-21 V at I =10mA 1 V F F T Max. 150 C J Package SOT-23 APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT MMBD4148 5D MMBD4148CA A1 Marking code on the device MMBD4148CC A4 MMBD4148SE A7 Repetitive peak reverse voltage V RRM 100 V Forward current I 200 mA F Repetitive peak forward surge current I 700 mA FRM at t=1s 2 Non-repetitive peak forward surge current I A FSM at t=1s 1 T Junction temperature range J -55 to +150 C T Storage temperature range -55 to +150 C STG 1 Version: E2001 MMBD4148/CA/CC/SE Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 357 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT (1) I = 10mA, T = 25C - 1.0 Forward voltage per diode F J V V F - 25.0 V = 20V ,T = 25C nA R J (2) V = 75V ,T = 25C - 5.0 Reverse current per diode R J I R A V = 20V ,T = 150C - 50.0 R A 75 - I = 5A ,T = 25C R J Reverse breakdown voltage V V (BR) I = 100A ,T = 25C 100 - R J f= 1MHz, V =0V - 4.0 Junction capacitance R C pF J I =10mA, I =1mA, F R - 4.0 Reverse recovery time t ns rr R =100, V =6V L R Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (Note 1) MMBD414xx RFG SOT-23 3K / 7 Reel MMBD414xx R5G SOT-23 10K / 13 Reel Note: 1.x defines part no. from8 to8SE 2 Version: E2001