X-On Electronics has gained recognition as a prominent supplier of MMBT3904 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3904 Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3904 Taiwan Semiconductor

MMBT3904 electronic component of Taiwan Semiconductor
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Part No.MMBT3904
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Taiwan Semiconductor Bipolar Transistors - BJT 0.2A NPN transistor
Datasheet: MMBT3904 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0984 ea
Line Total: USD 0.1

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 Aug to Thu. 08 Aug

Multiples : 24000

0
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.0984
10 : USD 0.088
100 : USD 0.061
1000 : USD 0.0208
3000 : USD 0.0166
9000 : USD 0.0139
24000 : USD 0.0118
45000 : USD 0.0111
99000 : USD 0.0092

   
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RoHS - XON
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We are delighted to provide the MMBT3904 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3904 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3904 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 60 V CBO High surge current capability V 40 V CEO Moisture sensitivity level: level 1, per J-STD-020 V 6 V RoHS Compliant EBO Halogen-free according to IEC 61249-2-21 I 200 mA C h 400 FE Package SOT-23 APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL MMBT3904 UNIT Marking code on the device 1AM Collector-base voltage V 60 CBO V Collector-emitter voltage V 40 V CEO Emitter-base voltage V 6 EBO V Collector current I 200 mA C Power dissipation P 300 mW D T -55 to +150 Junction temperature C J T -55 to +150 Storage temperature STG C 1 Version: E2001 MMBT3904 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Collector-base breakdown 60 - - I = 10 A, I = 0 V V C E (BR)CBO voltage Collector-emitter breakdown 40 - - I = 1 mA, I = 0 V V C B (BR)CEO voltage Emitter-base breakdown 6 - - I = 10 A, I = 0 V V E C (BR)EBO voltage - - 0.1 Collector cutoff current V = 60 V, I = 0 I A CB E CBO - - 50 Collector cutoff current V = 30 V, V = 3 V I nA CE BE(OFF) CEO - - 0.1 Emitter cutoff current V = 5 V, I = 0 I A EB C EBO V = 1 V, I = 10 mA 100 - 400 CE C V = 1 V, I = 50 mA 60 - - DC current gain CE C h FE V = 1 V, I = 100 mA 30 - - CE C Collector-emitter saturation - - 0.30 I = 50 mA, I = 5 mA V V C B CE(sat) voltage Base-emitter saturation - - 0.95 I = 50 mA, I = 5 mA V V C B BE(sat) voltage V = 20 V , I = 10 mA, CE C 250 - - Transition frequency f MHz T f= 100MHz t - - 35 ns Delay time V =3V,V =0.5V, d CC BE I =10mA, I =1mA t - - 35 ns Rise time C B1 r t - - 200 ns Storage time s V =3V,I =I =1mA, CC B1 B2 I =10mA t - - 50 ns Fall time C f ORDERING INFORMATION ORDERING CODE PACKAGE PACKING MMBT3904 RF SOT-23 3K / 7 Reel MMBT3904 RFG SOT-23 3K / 7 Reel MMBT3904 R5 SOT-23 10K / 13 Reel MMBT3904 R5G SOT-23 10K / 13 Reel MMBT3904-D0 RF SOT-23 3K / 7 Reel MMBT3904-D0 RFG SOT-23 3K / 7 Reel MMBT3904-D0 R5 SOT-23 10K / 13 Reel MMBT3904-D0 R5G SOT-23 10K / 13 Reel MMBT3904-B0 RF SOT-23 3K / 7 Reel MMBT3904-B0 RFG SOT-23 3K / 7 Reel MMBT3904-B0 R5 SOT-23 10K / 13 Reel MMBT3904-B0 R5G SOT-23 10K / 13 Reel 2 Version: E2001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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