X-On Electronics has gained recognition as a prominent supplier of MMBT3904 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3904 Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3904 Taiwan Semiconductor

MMBT3904 electronic component of Taiwan Semiconductor
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Part No.MMBT3904
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Taiwan Semiconductor Bipolar Transistors - BJT 0.2A NPN transistor
Datasheet: MMBT3904 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0953 ea
Line Total: USD 0.1 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan

Multiples : 24000

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.0953
10 : USD 0.0852
100 : USD 0.059
1000 : USD 0.0201
3000 : USD 0.0161
9000 : USD 0.0134
24000 : USD 0.0114
45000 : USD 0.0107
99000 : USD 0.0089

   
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MMBT3904 Taiwan Semiconductor 300mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 60 V CBO High surge current capability V 40 V CEO Moisture sensitivity level: level 1, per J-STD-020 V 6 V RoHS Compliant EBO Halogen-free according to IEC 61249-2-21 I 200 mA C h 400 FE Package SOT-23 APPLICATIONS Configuration Single die Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8 mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL MMBT3904 UNIT Marking code on the device 1AM Collector-base voltage V 60 CBO V Collector-emitter voltage V 40 V CEO Emitter-base voltage V 6 EBO V Collector current I 200 mA C Power dissipation P 300 mW D T -55 to +150 Junction temperature C J T -55 to +150 Storage temperature STG C 1 Version: E2001 MMBT3904 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Collector-base breakdown 60 - - I = 10 A, I = 0 V V C E (BR)CBO voltage Collector-emitter breakdown 40 - - I = 1 mA, I = 0 V V C B (BR)CEO voltage Emitter-base breakdown 6 - - I = 10 A, I = 0 V V E C (BR)EBO voltage - - 0.1 Collector cutoff current V = 60 V, I = 0 I A CB E CBO - - 50 Collector cutoff current V = 30 V, V = 3 V I nA CE BE(OFF) CEO - - 0.1 Emitter cutoff current V = 5 V, I = 0 I A EB C EBO V = 1 V, I = 10 mA 100 - 400 CE C V = 1 V, I = 50 mA 60 - - DC current gain CE C h FE V = 1 V, I = 100 mA 30 - - CE C Collector-emitter saturation - - 0.30 I = 50 mA, I = 5 mA V V C B CE(sat) voltage Base-emitter saturation - - 0.95 I = 50 mA, I = 5 mA V V C B BE(sat) voltage V = 20 V , I = 10 mA, CE C 250 - - Transition frequency f MHz T f= 100MHz t - - 35 ns Delay time V =3V,V =0.5V, d CC BE I =10mA, I =1mA t - - 35 ns Rise time C B1 r t - - 200 ns Storage time s V =3V,I =I =1mA, CC B1 B2 I =10mA t - - 50 ns Fall time C f ORDERING INFORMATION ORDERING CODE PACKAGE PACKING MMBT3904 RF SOT-23 3K / 7 Reel MMBT3904 RFG SOT-23 3K / 7 Reel MMBT3904 R5 SOT-23 10K / 13 Reel MMBT3904 R5G SOT-23 10K / 13 Reel MMBT3904-D0 RF SOT-23 3K / 7 Reel MMBT3904-D0 RFG SOT-23 3K / 7 Reel MMBT3904-D0 R5 SOT-23 10K / 13 Reel MMBT3904-D0 R5G SOT-23 10K / 13 Reel MMBT3904-B0 RF SOT-23 3K / 7 Reel MMBT3904-B0 RFG SOT-23 3K / 7 Reel MMBT3904-B0 R5 SOT-23 10K / 13 Reel MMBT3904-B0 R5G SOT-23 10K / 13 Reel 2 Version: E2001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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