MMBT3904L RFG Taiwan Semiconductor

MMBT3904L Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Epitaxial planar die construction - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOT-23 MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed o - High temperature soldering guaranteed: 260 C/10s - Weight: 8 mg (approximately) - Marking Code: 1E. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power Dissipation P 300 mW D Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6 V EBO I Collector Current 200 mA C o Junction and Storage Temperature Range T , T -55 to +150 J STG C Notes: Valid provided that electrodes are kept at ambient temperature PARAMETER SYMBOL MIN MAX UNIT I = 10 AVI = 0 Collector-Base Breakdown Voltage 60 - V C E (BR)CBO Collector-Emitter Breakdown Voltage I = 1 mA I = 0 V 40 - B V C (BR)CEO I = 0 Emitter-Base Breakdown Voltage I = 10 AV 6- V C E (BR)EBO Collector Cut-off Current V = 60 V I = 0 I -0.1 A CB E CBO V = 3 V Collector Cut-off Current V = 30 V I -50 nA BE(OFF) CE CEO V = 5 V I = 0 I Emitter Cut-off Current -0.1 A EB C EBO V = 1 V I = 10 mA 100 400 C CE I = 50 mA h DC Current Gain V = 1 V 60 - C FE CE V = 1 V I = 100 mA 30 - CE C I = 5 mA Collector-Emitter Saturation Voltage I = 50 mA V - 0.3 V C B CE(sat) I = 5 mA Base-Emitter Saturation Voltage I = 50 mA V - 0.95 V B C BE(sat) V = 20 V I = 10 mA f= 100MHz f 250 - Transition frequency MHz CE C T I = 10 mA V = 3 V V = 0.5 V t -35 Delay time C ns CC BE d I = 1.0 mA Rise time t -35 ns B1 r V = 3 V I = 10 mA t - 200 Storage time ns CC C s I = I = 1.0 mA Fall time t -50 ns B1 B2 f Document Number: DS S1501029 Version: A15MMBT3904L Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig.1 Typical Pulsed Current Gain vs. Collector Current Fig. 2 Collector-Emitter Saturation Voltage vs. Collector Current 500 0. 20 V = 5V CE 125 C = 10 400 0. 15 300 125 C 25 C 0. 10 200 25 C 100 - 40 C 0. 05 - 40 C 0 0. 00 0. 1 1. 0 10. 0 100. 0 0 1 10 100 I - Collector Current (mA) C I - Collector Current (mA) C Fig. 3 Base-Emitter Saturation Voltage vs. Collector Current Fig. 4 Base-Emitter On Voltage vs. Collector Current 1. 1 1 1 V = 5V CE = 10 0. 9 0. 8 - 40 C 0. 8 0. 7 - 40 C 25 C 0. 6 0. 6 25 C 0. 5 0. 4 125 C 0. 4 125 C 0. 3 0. 2 0. 1 1 10 100 0. 1 1 10 100 I - Collector Current (mA) C I - Collector Current (mA) C Fig. 5 Collector-Cutoff Current Fig. 6 Capacitance vs. vs. Ambient Temperature Reverse Bias Voltage 1000 10 f = 1.0 MHz V = 30V CB 100 10 C ibo 1 C obo 0. 1 0. 01 1 25 50 75 100 125 150 0. 1 1 10 100 O T - Ambient Temperature ( C) Reverse Bias Voltage (V) A Document Number: DS S1501029 Version: A15 I -Collector Current (nA) CBO V - Base-Emitter Voltage (V) h - Typical Pulsed Current Gain BESAT FE V - Collector-Emitter Voltage (V) Capacitance (pF) CESAT V - Base-Emitter On Voltage (V) BE(ON)