X-On Electronics has gained recognition as a prominent supplier of 1N914BW RHG Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N914BW RHG Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N914BW RHG Taiwan Semiconductor

1N914BW RHG electronic component of Taiwan Semiconductor
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Part No.1N914BW RHG
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose Power Switching SOD-123F 100V 0.15A Switching Diode & Array
Datasheet: 1N914BW RHG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.114 ea
Line Total: USD 0.11 
Availability - 5191
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5191
Ship by Fri. 22 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.114
10 : USD 0.0765
100 : USD 0.0403
1000 : USD 0.0362
3000 : USD 0.0268
9000 : USD 0.0228
24000 : USD 0.0214
45000 : USD 0.0202
99000 : USD 0.0202

   
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We are delighted to provide the 1N914BW RHG from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N914BW RHG and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1N4148W/1N4448W/1N914BW Taiwan Semiconductor 150mA, 75V Switching Diode FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 150 mA F High surge current capability V 75 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 2 A Compliance to RoHS directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC V at I =100mA 1.00 V F F Halogen-free according to IEC 61249-2-21 T Max. 150 C J APPLICATIONS Package SOD-123F Switching mode power supply (SMPS) Configuration Single die Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: SOD-123F Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 8.85 0.5mg ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT 1N4148W D1 Marking code on the device 1N4448W D2 1N914BW D3 Power dissipation P 400 mW D Reverse voltage V 100 V R Repetitive peak reverse voltage V 75 V RRM Forward current I 150 mA F Repetitive peak forward current I 300 mA FRM Non-repetitive peak forward surge current t=1.0s I 2 A FSM Junction temperature range T -65 to +150 C J Storage temperature range T -65 to +150 C STG 1 Version: K1804 1N4148W/1N4448W/1N914BW Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 450 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 5mA, T = 25C 0.62 0.72 1N4448W, 1N914BW F J Forward I = 10mA, T = 25C - 1.00 1N4148W F J V V F (1) voltage I = 100mA, T = 25C - 1.00 1N4448W, 1N914BW F J 100 - I =100A, T = 25C R J Reverse voltage V V R I =5A, T = 25C 75 - R J V =20V T = 25C - 25 R J nA (2) Reverse leakage current I R V =75V T = 25C - 5 A R J 1 MHz, V =0V - 4 Junction capacitance R C pF J I =10mA, I =60mA, F R - 4 Reverse recovery time t ns rr R =100, I =1mA L RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKAGE PACKING 1N4148W RHG SOD-123F 3K / 7 Reel 1N4148W RH SOD-123F 3K / 7 Reel 1N4448W RHG SOD-123F 3K / 7 Reel 1N4448W RH SOD-123F 3K / 7 Reel 1N914BW RHG SOD-123F 3K / 7 Reel 1N914BW RH SOD-123F 3K / 7 Reel 2 Version: K1804

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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