BAV99-T Rectron

RECTRON SEMICONDUCTOR BAV99 TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES * Silicon epitaxial planar diode * Fast switching * Surface mounting device *A7 Device marking SOT-23 MECHANICAL DATA (C) (B) * Epoxy : Device has UL flammability classification 94V-0 * Weight : apporx. 0.008g (C) (A) (A) ( ) ( ) .055 1.40 .028 0.70 ( ) ( ) .047 1.20 .014 0.35 ( ) .102 2.60 .083 (2.10) R0.05 (.002) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ( ) .045 1.15 o Ratings at 25 C ambient temperature unless otherwise specified. ( ) .033 0.85 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS (At TA = 25 C unless otherwise noted) RATINGS SYMBOL UNITS BAV99 VRRM Volts Repetitive Peak Reverse Voltage 70 o I 215 mA Forward Continuous Current at T =25 C F A o Repetitive Peak Forward Current at T =25 C I 450 mA FRM A o I 1000 mA FSM Surge Forward Current at tp < 1 ms, at T =25 C A 250 Total Power Dissipation P mW D 0 C T 150 Junction Temperature J 0 -65 to + 150 C Storage Temperature Range TSTG 2008-10 ( ) .119 3.04 .110 (2.80) .081 (2.04) ( ) .070 1.78 ( ) .040 1.02 .035 (0.88) ( ) .020 0.50 ( ) .007 0.17 .015 (0.37) .003 (0.08) o ELECTRICAL CHARACTERISTICS (At TA = 25 C unless otherwise noted) SYMBOL Value CHARACTERISTICS Unit Testing Condition V(BR)R Reverse Breakdown Voltage 70 V Ir=100uA 715 If=1mA VF(1) mV VF(2) 855 mV If=10mA Forward Voltage VF(3) 1000 mV IF=50mA VF(4) 1250 mV If=150mA Reverse Current 2.5 uA I Vr=70V R 1.5 pF Total Capacitance C Vr=0V,F=1MHZ T Trr 6 nS Reverse Recovery Time If=Ir=10mA,RL=100 ohm, measured at ir=1mA CHARACTERISTIC CURVES FIG. 1 - FORWARD CURRENT & FORWARD VOLTAGE FIG. 2 - DIODE CAPACITANCE 500 200 100 400 60 40 300 20 10 200 6 4 100 2 1 0 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) 0 400 800 1200 1600 2000 FORWARD VOLTAGE,VF (mV ) RECTRON FORWARD CURRENT, iF(mA) DIODE CAPACITANCE,Cd (pF)