BC807-25 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES Ldeally suited for automatic insertion * Epitaxial planar die construction * Complementary NPN type available(BC817) * SOT-23 COLLECTOR 3 BASE 0.055(1.40) MECHANICAL DATA 1 0.047(1.20) 2 * Case: Molded plastic EMITTER * Epoxy: UL 94V-O rate flame retardant 0.006(0.15) 0.043(1.10) 0.003(0.08) 0.035(0.90) * Lead: MIL-STD-202E method 208C guaranteed 0.020(0.50) * Mounting position: Any 0.004(0.10) 0.012(0.30) 0.000(0.00) * Weight: 0.008 gram 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 1 0.019(2.00) 0.118(3.00) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.071(1.80) 0.110(2.80) O 3 Ratings at 25 C ambient temperature unless otherwise specified. 2 Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGS ( TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL VALUE UNITS Collector-base voltage V -50 V CBO V Collector-emitter voltage V -45 CEO Emitter-base voltage V -5 EBO V Collector current-continuous I -0.5 A C Collector dissipation 0.3 P W C o Junction and storage temperature TJ,Tstg -55 -150 C o ELECTRICAL CHARACTERISTICS ( TA = 25 C unless otherwise noted ) CHARACTERISTICS SYMBOL MIN MAX UNITS Collector-base breakdown voltage (I = -10mA, I =0) V C E CBO -50 - V Collector-emitter breakdown voltage (I = -10mA, I =0) V C B CEO -45 - V Emitter-base breakdown voltage (I = -1mA, I =0) V E C EBO -5 - V Collector cut-off current (V = -45V, I =0) I - -0.1 mA CB E CBO Collector cut-off current (V = -40V, I =0) I - -0.2 mA CE B CEO Emitter cut-off current (V = -4V, I =0) I EB C EBO - -0.1 mA DC current gain (V = -1V, I = -100mA) h 160 400 - CE C FE(1) Collector-emitter saturation voltage (I = -500mA, I = -50mA) V - -0.7 V C B CE(sat) Base-emitter saturation voltage (I = -500mA, I = -50mA) V - -1.2 V C B BE(sat) Transition frequency (V = -5V, I = -10mA, f= 100MHZ) fT 100 - MHZ CE C MARKING 5B NOTE: Fully ROHS compliant, 100% Sn plating (Pb-free). 2007-3RATING AND CHARACTERISTICS CURVES ( BC807-25) 400 1000 O T =25 C A See Note 1 f=20MHZ 300 -V =5.0V CE 1.0V 200 100 100 0 10 0 100 200 1 10 100 1000 O T SUBSTRATE TEMPERATURE( C) -I , COLLECTOR CURRENT (mA) SB, C Figure2 Gain-Bandwidth Product vs Figure1 Power Derating Curve Collector Current 0.5 1000 -IC / - IB= 10 -VCE= 1V Typical limits O at TA=25 C O 0.4 150 C O 25 C 0.3 O -50 C 100 0.2 O 25 C O 150 C 0.1 O -50 C 10 0 0.1 1 10 100 1000 0.1 1 10 100 1000 -I ,COLLECTOR CURRENT(mA) -Ic, COLLECTOR CURRENT (mA) c Figure3 Collector Sat Voltage vs Collector Current Figure4 DC Current Gain vs Collector Current 500 100 3.2 2.8 0.35 2.4 0.3 400 2 80 1.8 0.25 1.6 300 60 1.4 0.2 1.2 0.8 0.15 200 40 0.6 0.1 0.4 100 20 -IB= 0.05mA -IB= 0.2mA 0 0 0 1 2 0 10 20 -V , COLLECTOR-EMITTER VOLTAGE (V) -V , COLLECTOR - EMITTER VOLTAGE (V) CE CE Figure5 Typical Emitter-Collector Characteristics Figure6 Typical Emitter-Collector Characteristics -Ic, COLLECTOR CURRENT (mA) -V , COLLECTOR SATURATION VOLTAGE (V) P , POWER DISSIPATION (mW) CESAT d -Ic, COLLECTOR CURRENT (mA) h , DC CURRENT GAIN f , GAIN BANDWIDTH PRODUCT(MHZ) FE T